2SK1406 Search Results

2SK140

Abstract: 2SK1406 t1624
Contextual Info: P o w e r F-MOS FET 2SK1406 2S K 1406 Silicon N-Channel Power F-MOS FET P ackage Dim ensions • Features • • • • Low RRD o„ = 0.32il (typ.) High speed switching tf= 140ns (typ.) Secondary breakdown free High voltage power Unit: mm 5.2max. 15.5max.

Contextual Info: Power F-MOS FET 2SK1406 2SK1406 Silicon N-Channel Power F-MOS FET Package Dim ensions • Features • Low R rd „„ =0 .3 2 n (typ.) Unit: mm • High speed switching tf= 140ns (typ.) 5.2max. 15.5max. 6.9mm. • Secondary breakdown free 3.2- • High voltage power

Contextual Info: 2SK1406 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)3 Minimum Operating Temp (øC)

MA166s

Abstract: MA165 MA166
Contextual Info: 2SK1406 Switching Diodes MA165, MA166, MA167 Silicon epitaxial planer type Unit : mm For switching circuits φ0.45 max. Small capacity between pins, Ct 2.2±0.3 ● Parameter Symbol Rating MA165 Reverse voltage DC MA166 Repetitive peak Unit 35 VR 50 MA167

Contextual Info: 2SK1406 Switching Diodes MA200K Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current

2SK1406

Contextual Info: 2SK1406 Switching Diodes MA152A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Small capacity between pins, Ct 1 0.95 ● +0.2 Short reverse recovery period trr

Contextual Info: 2SK1406 Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS Unit : mm • Features ON-resistance RDS on : R DS(on)= 0.32Ω(typ) ● High-speed 5.0±0.2 3.2 breakdown voltage, large allowable power dissipation ■ Applications Non-contact relay ● Solenoid

2SK1406

Contextual Info: Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET • Features ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5

Contextual Info: Panasonic Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Low ON-resistance R ds oii : R ds(oii)= 0.32£2(typ) High-speed switching : tf = 140ns(typ) No secondary breakdown High breakdown voltage, large allowable power dissipation

MA200K

Contextual Info: 2SK1406 Switching Diodes MA200K Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current

Contextual Info: Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET • Features unit: mm 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8

marking m2i

Abstract: MA125
Contextual Info: 2SK1406 Switching Diodes MA125 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.5 –0.05 1 +0.1 +0.1 6 2 4 3 +0.1 0.16–0.06 +0.2 1.1–0.1 mounting 5 0.8 +0.2 2.9 –0.05 Four-element incorporated in one package, enabling high-density

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2SK996

Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46

2SK1411

Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Contextual Info: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2SK2324

Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)