2SK1413 Search Results

2SK1413

Contextual Info: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.

2SK1413

Contextual Info: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.

2sK1413

Contextual Info: 2SK1413 2076 U H U l t r a h i g h V o l t a g e S e rie s V DSs = 1 5 0 0 V N Channel Power MOSFET F e a tu re s • Low ON resistance, low input capacitance, very high-speed switching. • H igh reliability (Adoption of HVP process). •M icaless package facilitating mounting.

2SK1413

Abstract: 2sk1413-spice bsim3 2sk141 10e21
Contextual Info: 2SK1413 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.1 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 1.0 RDSW 1.05E+06 WINT NFACTOR 0.5 CDSCD PCLM 0.01 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.0E-12 CGDL 4.0E-09 CLC

2SK1413

Abstract: 41293TH EN4229
Contextual Info: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.

Contextual Info: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SK1411

Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Contextual Info: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

2SK1413

Contextual Info: Ordering number : EN 4 2 2 9 2SK1413 No.4229 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications Features • Low ON resistance, low input capacitance, very high-speed switching. •High reliability Adoption of HVP process .

SANYO Replacement list

Abstract: 2SK1885 2sk3615 2SC6082 2SK3706 2SK2432 2SA2098 2sc6082 Replacement 2SK3747 2SC4108
Contextual Info: Ordering number : E I 0 0 6 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

2sK1413

Abstract: T0220FI Vdss 1500V
Contextual Info: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

Contextual Info: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0