2SK1609 Search Results

Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 ● Small capacity between pins, Ct ● Cathode common connection type +0.1 2 +0.1 Short reverse recovery period trr

Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 0.95 3 +0.1 in the high-speed mounting machine 1 0.4–0.05 Flat lead type, with improved mounting efficiency and solderability

MA1U152WA

Abstract: MA1U152 2SK1609
Contextual Info: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 1.5–0.05 VRM Peak reverse voltage Single Forward current DC IF Double Single Peak forward current Single Non-repetitive peak forward surge current

2SK1609

Abstract: 2sk16
Contextual Info: Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±8

MA1U152WK

Abstract: 2SK1609 MA1U152 2sk16 M/MA1U152WK
Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 1.5–0.05 0.95 1.9±0.1 3 0.4–0.05 +0.1 in the high-speed mounting machine ue pl d in an c se ed lud pl vi an m m es

Contextual Info: 2SK1609 Switching Diodes MA152WK Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 Anode common connection type Parameter Forward current DC Peak forward current Non-repetitive peak forward surge current VR VRM Single

Contextual Info: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur

MA178

Contextual Info: 2SK1609 Switching Diodes MA178, MA179 Silicon epitaxial planer type Unit : mm For high speed switching circuits φ0.45 max. ● Small capacity between pins, Ct 1st Band 2nd Band 2.2±0.3 High switching speed • Absolute Maximum Ratings Ta= 25˚C Symbol

Contextual Info: Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)

2sk2324

Abstract: 2SK2124 2SK2127 2sk2323
Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )

MA182

Abstract: F056 GREEN Color band DIODES DO 35 "cathode indication" "MA182"
Contextual Info: 2SK1609 Switching Diodes MA182 Silicon epitaxial planer type For high voltage resistance switching and small-power current rectification Unit : mm f0.56 max. 1 ● High reverse voltage VR VR= 200V ● Large output current I O ● DO-35 package 4.5 max. • Features

IR 30 D1

Contextual Info: 2SK1609 Switching Diodes MA153, MA153A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Series connection in package 1 0.95 ● +0.2 Small capacity between pins, Ct

MA27T-B

Abstract: MA27WA MA27W-A MA27B MA27T-A MA27TA MA27W MA27 ma27a PANASONIC MA27
Contextual Info: 2SK1609 Varistors MA27 Series Silicon epitaxial planer type variable resistor For temperature and reduced voltage compensation Unit : mm ø0.56 max. 1 ● High reliability achieved through combination of a planer type chip COLORED BAND INDICATES CATHODE 24 min.

Contextual Info: 2SK1609 Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS Unit : mm • Applications ● High-speed ø3.1±0.1 switching switching mode regulator high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 RDS(on), high-speed switching characteristic

2SK1609

Contextual Info: Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 500

MA207

Abstract: 2SK1609 2sk16
Contextual Info: 2SK1609 Switching Diodes MA207 Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 connection 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

Contextual Info: 2SK1609 Switching Diodes MA132WA Silicon epitaxial planer type 0.28±0.05 Short reverse recovery period t rr ● Small capacity between pins, Ct ● Extra-small SS-Mini type package with two incorporated elements, 1 3 Unit 80 VR +0.05 0.12–0.02 0.28±0.05

Contextual Info: 2SK1609 Switching Diodes MA207 Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 connection ● Supply 0.65 max. 14.5±0.5 ● Series 1.0 capacity between pins, Ct 0.85 ● Small 0.8 • Features 3.5±0.1 For switching circuits

Contextual Info: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 Anode common connection type Parameter Forward current DC Peak forward current Non-repetitive peak forward surge current VR VRM Single

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK1609 Silicon N-Channel Power F-MOS U nit : rrnn I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)

MA154WA

Abstract: ma154 2SK1609 SC-71 2sk16
Contextual Info: 2SK1609 Switching Diodes MA154WA Silicon epitaxial planer type Unit : mm For switching circuits 6.9±0.1 1.5 1.0 R 4.5±0.1 0. 7 1.0±0.1 Small capacity between pins, Ct 0.85 4.1±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

ma29WA

Abstract: MA29W-A MA29T-B MA29B MA29W-B MA29-B MA29 Series MA29T-A MA29W MA29
Contextual Info: 2SK1609 Varistors MA29 Series Silicon epitaxial planer type variable resistor Unit : mm For temperature and reduced voltage compensation f0.45 max. and glass sealing structure ● Extremely 2.2±0.3 mounting because of DO-34 DHD envelope used small reverse current IR

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and