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    2SK19 Search Results

    2SK19 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1934-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3P, /Tube Visit Renesas Electronics Corporation
    2SK1947-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PL, /Tube Visit Renesas Electronics Corporation
    2SK1954-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1954-Z-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1958-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SK19 Price and Stock

    Rochester Electronics LLC 2SK1968-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1968-E Bulk 21
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    Rochester Electronics LLC 2SK1947-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1947-E Bulk 13
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    Rochester Electronics LLC 2SK1971-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1971-E Bulk 13
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    Rochester Electronics LLC 2SK1920-E

    NCH 10V DRIVE SERIES
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    DigiKey 2SK1920-E Bulk 333
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    Rochester Electronics LLC 2SK1957-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1957-E Bulk 123
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    Find more 2SK19 price and stock on Findchips.com

    2SK19 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK19 Micro Electronics N-CHANNEL SILICON FET Scan PDF
    2SK19 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK19 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK19 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK19 Unknown Cross Reference Datasheet Scan PDF
    2SK19 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK19 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK19 Unknown FET Data Book Scan PDF
    2SK19 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK19 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK19 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK19 Toshiba Japanese Transistor Data Book Scan PDF
    2SK190 Hitachi Semiconductor Silicon N-Channel Junction FET Scan PDF
    2SK190 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK190 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK190 Unknown FET Data Book Scan PDF
    2SK1900 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1900 Unknown N-Channel Power MOSFET Scan PDF
    2SK1900 Unknown FET Data Book Scan PDF
    ...

    2SK19 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SK1936-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK1936-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1983-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK1983-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original     		PDF 2SK1969-01

    k1930

    Abstract: 2SK1930
    Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1930 k1930 2SK1930

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original     		PDF 2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198

    mosfet 600v

    Abstract: 2SK1941 2SK1941-01R
    Text: 2SK1941-01R N-channel MOS-FET FAP-IIA Series 600V > Features - 0,55Ω 16A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK1941-01R mosfet 600v 2SK1941 2SK1941-01R

    2SK1947

    Abstract: No abstract text available
    Text: 2SK1947 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • • • • • Low on–resistance High speed switching Low Drive Current Built–In Fast Recovery Diode trr = 140 ns Suitable for Switching regulator, Motor Control


    Original     		PDF 2SK1947 2SK1947

    2SK1971

    Abstract: DSA003725
    Text: 2SK1971 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline


    Original     		PDF 2SK1971 2SK1971 DSA003725

    Untitled

    Abstract: No abstract text available
    Text: 2SK1980 Power F-MOS FETs 2SK1980 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche ● No 6.0±0.5 1.0±0.1 switching : tf= 25ns secondary breakdown 1.5±0.1 ● High-speed 3.4±0.3 8.5±0.2 VGSS=±30V guaranteed 10.0±0.3 ● energy capability guaranteed : EAS > 15mJ


    Original     		PDF 2SK1980

    Untitled

    Abstract: No abstract text available
    Text: 2SK1942-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators


    Original     		PDF 2SK1942-01 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK1981-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		PDF 2SK1981-01 O-220AB SC-46

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1928 ij100A/MS 2SK1928

    2SK1904

    Abstract: No abstract text available
    Text: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C


    OCR Scan     		PDF 2SK1904 42893TH AX-8377 2SK1904

    Untitled

    Abstract: No abstract text available
    Text: 2SK1920 AP Advanced Performance Series 20 83 A VDss —2 5 0 V 2092A N Channel Power M O S F E T F e a tu r e s • Low ON re sista n c e . • V ery high-sp eed sw itch in g . • Low -voltage d riv e. A b s o lu te M a x im u m R a tin g s a t T a = 25°C


    OCR Scan     		PDF 2SK1920

    AX-9832

    Abstract: No abstract text available
    Text: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss


    OCR Scan     		PDF 2SK1921 51193TH AX-9832

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    2SK1917

    Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
    Text: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee


    OCR Scan     		PDF 2SK1917-M 032tf SC-67 20Kil) 2SK1917 SiC POWER MOSFET ups electrical symbols A2266

    K192a

    Abstract: No abstract text available
    Text: T O SH IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz)


    OCR Scan     		PDF 2SK192A 100MHz) 100MHz K192a

    it412

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S TO-22QFL U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		PDF 2SK1930 O-22QFL it412

    2SK1934

    Abstract: No abstract text available
    Text: 2SK1934 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Outline 2SK1934 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SK1934 2SK1934

    Untitled

    Abstract: No abstract text available
    Text: F U JI 2SK1944-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 2, 8 0 , 5A 10ÒW > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK1944-01 20Kfl)

    Untitled

    Abstract: No abstract text available
    Text: FU JI a t a i E i r t e u e 2SK1945-01 L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8£2 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof


    OCR Scan     		PDF 2SK1945-01

    a2297

    Abstract: No abstract text available
    Text: 2SK1944-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET - F A P - I I A • Features S E R I E S Outline Drawings • High speed switching • l ow on-resistanoe • I Jo secondary breakdown • l ow driving power


    OCR Scan     		PDF 2SK1944-01 a2297

    mosfet 500v

    Abstract: No abstract text available
    Text: F U JI 2SK1981-01 N-channel MOS-FET 500V 0,76Q 10A 80W FAP-IIA Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK1981-01 mosfet 500v