2SK2152 Search Results

2SK2152

Contextual Info: Ordering number:ENN4569A N-Channel Silicon MOSFET 2SK2152 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2152] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

2SK2152

Contextual Info: Ordering number:ENN4569A N-Channel Silicon MOSFET 2SK2152 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2152] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5

2SK2152

Contextual Info: Ordering number: E N 4569A 2SK2152 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings atTa = 25°C Drain-to-Source Voltage Vpss Gate-to-Source Voltage

Contextual Info: Ordering number :EN4885 No-4885 FX602 // N-Channel Silicon MOSFET SAHYO i Ultrahigh-Speed Switching Applications • H L _ I I _ _ F eatu res ■Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed

e1220

Abstract: 2SK2437
Contextual Info: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

CI 7001

Abstract: 2SD1203 SS170 2sb1205 2SD180
Contextual Info: so h yo New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5 /6 - p in XPs a re in te rm e d ia te siz e d d e v ic e s between Sanyo PCP and TP packages and have high power c a p a b il i ty . T h is package lin e in c lu d e s la rg e c u rre n t sw itc h in g t r a n s i s t o r s e r i e s , power MOS FET s e rie s , and o th e r d evice s e rie s .

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

2SK2152

Abstract: FX602
Contextual Info: Ordering number:EN4885 FX602 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

2SK1471

Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
Contextual Info: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

Marking 602

Contextual Info: Ordering number:EN4885 FX602 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

2sk303

Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^