2SK238 Search Results

2SK2382

Contextual Info: TOSHIBA 2SK2382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2382 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r

K2381

Abstract: 2SK2381 k*2381 Tr k2381
Contextual Info: 2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2381 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance

Contextual Info: T O S H IB A 2SK2382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 7 ^MF •1n». i «HF 8 ?^ HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: T O SH IB A 2SK2381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K2 381 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

2SK2381

Contextual Info: TOSHIBA 2SK2381 T O SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE tt-M O S V 2SK2381 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3

2SK238

Abstract: K17 1-GATE NEC CSJ I084
Contextual Info: NEC + T / v r x 2SK238 h F M f i — = y > i > 7 . 9 - - m N-Channel Silicon Junction Field Effect Transistor FM Tuner PACKAGE DIMENSIONS # * / FEATURES {Unit : mm) I DSS ^ I ' ? < , \9 u \ i 3 - k $ ]' ' < r > X ' , 7 /: * , 2 . 8 ± 0 .2 t m I T f t S T ' T ,

2SK2382

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2SK2382 DATA SILICON N CHANNEL MOS TYPE tt- M O S V (2SK2382) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

2SK2383

Abstract: 7a DIODE
Contextual Info: Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm 15.5±0.5 10.0 V ±30

Infrared-Sensor

Abstract: 2SK2380 SC-75 ciss
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Ratings Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID ±1

2SK2382

Contextual Info: TOSHIBA 2SK2382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2382 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

2SK2382

Contextual Info: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) l High forward transfer admittance : |Yfs| = 17 S (typ.)

Contextual Info: T O SH IB A 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rj)g (ON) = 22mQ (Typ.)

2SK2382

Abstract: DIODE JS
Contextual Info: TOSHIBA 2SK2382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2382 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

2SK2385

Abstract: S2510
Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive

Contextual Info: TOSHIBA 2SK2381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2381 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •

2SK2382

Contextual Info: TOSHIBA 2SK2382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2382 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (O N )~0.130 (Typ.)

2SK2380

Contextual Info: 2SK2380 Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For infrared sensor 1.6±0.15 ● Small capacitance of Ciss, Coss , Crss ● Downsizing 0.4 0.5 +0.1 1 3 0.5 gate-source leakage current, IGSS

Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 38 5 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3

2SK2380

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.44) ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss

k2382

Abstract: k2382 TRANSISTOR
Contextual Info: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)

k2381

Abstract: k*2381
Contextual Info: 2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2381 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance

Contextual Info: Silicon Junction FETs Small Signal 2SK2380J Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 2 VGDO Gate-source voltage (Drain open) VGSO Gate current

k*2381

Abstract: K2381 Tr k2381 2SK2381 TRANSISTOR MAKING
Contextual Info: 2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2381 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance

2SK238

Contextual Info: JUNCTION FIELD EFFECT TRANSISTOR 2SK238 FM TUNER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Low Feedback Capacitance Crss * 0.07 pF TYP. in m illim eter« •H ig h l y fs I l y fs I * 3.5 ms TYP. ABSOLUTE MAXIMUM RATINGS