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    2SK2544 Search Results

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    2SK2544 Price and Stock

    Toshiba America Electronic Components 2SK2544(F)

    MOSFET N-CH 600V 6A TO220AB
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    Component Electronics, Inc 2SK2544 36
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    2SK2544 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2SK2544
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    2SK2544
    Toshiba N-Channel MOSFET Original PDF 415.78KB 6
    2SK2544
    Toshiba Original PDF 44.05KB 9
    2SK2544
    Toshiba Field Effect Transistor, Switching Regulator Applications Original PDF 254.88KB 6
    2SK2544
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK2544
    Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF 313.18KB 5
    2SK2544
    Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications Scan PDF 278.2KB 5
    2SK2544(F)
    Toshiba 2SK2544 - MOSFETs MOSFET N-Ch 600V 6A Rdson=1.25Ohm Original PDF 422.46KB 6

    2SK2544 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K2544

    Abstract: transistor k2544 TOSHIBA K2544 K2544 Transistor 2-10P1B 2SK2544
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


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    2SK2544 K2544 transistor k2544 TOSHIBA K2544 K2544 Transistor 2-10P1B 2SK2544 PDF

    2-10P1B

    Abstract: 2SK2544
    Contextual Info: TOSHIBA 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2544 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGURATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm I* . • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)


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    2SK2544 2-10P1B 2SK2544 PDF

    2SK2544

    Abstract: 2-10P1B
    Contextual Info: TOSHIBA 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2544 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Drain-Sorce ON Resistance : Rd S(O N )“ 0.9O (Typ.) • High Forward Transfer Admittance : |Yfs| = 5.5S (Typ.)


    OCR Scan
    2SK2544 2SK2544 2-10P1B PDF

    TOSHIBA K2544

    Abstract: transistor k2544 k2544
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)


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    2SK2544 TOSHIBA K2544 transistor k2544 k2544 PDF

    Contextual Info: TOSHIBA 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGURATOR APPLICATIONS 10.3MAX. • Low Drain-Sorce ON Resistance a t t :


    OCR Scan
    2SK2544 20kii) --25H PDF

    S1998

    Contextual Info: T O S H IB A 2SK2544 T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE tt- M O S V 2SK2544 HIGH SPEED, HIGH VO LTAGE SW ITCH IN G APPLICATIO NS SW ITCH IN G REG U R ATO R APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm 1 0 .3 M A X -


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    2SK2544 20kil) S1998 PDF

    2SK2544

    Abstract: DR-6 2-10P1B
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current


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    2SK2544 2SK2544 DR-6 2-10P1B PDF

    2-10P1B

    Abstract: 2SK2544
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) l High forward transfer admittance : |Yfs| = 5.5 S (typ.) l Low leakage current


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    2SK2544 2-10P1B 2SK2544 PDF

    Contextual Info: TO SH IB A 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2544 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGURATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. • • • • g3.6 ±0.2 Low Drain-Sorce ON Resistance : R d S (0N = -9^ (Typ.)


    OCR Scan
    2SK2544 PDF

    K2544

    Abstract: transistor k2544 2SK2544 2-10P1B
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


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    2SK2544 K2544 transistor k2544 2SK2544 2-10P1B PDF

    K2544

    Abstract: transistor k2544 K2544 Transistor 2-10P1B 2SK2544
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


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    2SK2544 K2544 transistor k2544 K2544 Transistor 2-10P1B 2SK2544 PDF

    K2544

    Abstract: transistor k2544 K2544 Transistor TOSHIBA K2544 DR-6 2-10P1B 2SK2544
    Contextual Info: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)


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    2SK2544 K2544 transistor k2544 K2544 Transistor TOSHIBA K2544 DR-6 2-10P1B 2SK2544 PDF

    L56C

    Abstract: 2-10P1B 2SK2544
    Contextual Info: TO SHIBA 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2544 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGURATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. • • • • , 03.610.2 < Pt X


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    2SK2544 L56C 2-10P1B 2SK2544 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Contextual Info: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


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    DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF