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    2SK2563 Search Results

    2SK2563 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2563 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2563 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF

    2SK2563 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2563

    Abstract: F4F60VX2 600V,4A DIODE
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    PDF 2SK2563 F4F60VX2) FTO-220 600V4A 00-200V 110mJ 2SK2563 F4F60VX2 600V,4A DIODE

    600V,4A DIODE

    Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2563 F4F60VX2) FTO-220 600V4A 00-200V 110mJ 600V,4A DIODE 2SK2563 600V4A F4F60VX2 2a 400v mosfet

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2563 F4F60VX2) 600V4A FTO-220 00-200V 110mJ

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


    Original
    PDF 2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


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    PDF 2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151

    Untitled

    Abstract: No abstract text available
    Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100


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    PDF 61-4SMD) O-220 IT0-220 2SK1533 FT0-220 FTO-220 ST0-220 67SMD)

    shindengen SH 222

    Abstract: -20/shindengen SH 222 2sk type
    Text: Power MOS F E T Specification 1. Absolute Maximum Ratings Item Symbol Condition Ratings Unit - 5 5 - 1 5 0 °C Storage Temperature T s tg Channel Temperature ^ch 15 0 °C Drain-Source Voltage V d ss 6 0 0 V Gate-Sourse Voltage V GS S ±30 V Drain Current DC


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    PDF 2SK2563 shindengen SH 222 -20/shindengen SH 222 2sk type

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs VX-II series N-Channel, Enhancement type /X X V 1 E-pack SMD Surface Mount E-pack (Lead type) V dss . ry i 2SK2177 2SK2178 2SK2179 Id . Pt . Ï.M . . Ï W I . _ . l y . i . . _ 10 15 20 40 ±30 ±30


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    PDF STO-220 2SK2177 2SK2178 2SK2179 2SK2181 2SK2184 2SK2187 2SK2191 FTO-220