2SK2660 Search Results

2SK2660

Contextual Info: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 Symbol Ratings Unit Drain to Source breakdown voltage VDSS

Contextual Info: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage

2SK2660

Contextual Info: Panasonic P o w e r F - M O S FETs 2SK2660 Tentative Silicon N -C hannel Power F-M OS U n it : m m • Features • High-speed switching • High drain-source voltage (V d ss ) ■ Applications • High-speed switching Absolute Maximum Ratings (Tc = 25°C)

Contextual Info: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 M Di ain sc te on na tin nc ue e/ d 2.3±0.1 0.5±0.1 Drain to Source breakdown voltage Gate to Source voltage

Contextual Info: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • High-speed switching • High drain-source voltage (V d s s ) ■ Applications • High-speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage

2SK2660

Contextual Info: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 200 V Gate to Source voltage

Contextual Info: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : rmn • Features • High-speed switching • High drain-source voltage (V qss) ■Applications • High-speed switching Absolute Maximum Ratings (Tc = 25°C) Parameter Drain-Source breakdown voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>