2SK2714 Search Results

Mosfet FTR 03-E

Contextual Info: Transistors Switching 500V, 10A 2SK2714 • F e a tu re s ►External dim ensions (Units: mm) 1 ) Low on-resistance. 2) ,+ 0 .3 1 - 0.1 High-speed switching. As+0-3 0.1 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e g u ara ntee d at V gss = ± 3 0 V .

2SK2714

Contextual Info: Transistors Switching 500V, 10A 2SK2714 ♦Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed •E xte rn a l dimensions (Units: mm) at Vgss = ± 3 0 V . 5) Easily designed drive circuits.

2SK2714

Abstract: mosfet 10a 500v MOSFET 10A mosfet 500v 10A mosfet
Contextual Info: Transistors Switching 500V, 10A 2SK2714 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel

2SK2714

Contextual Info: Transistors Switching 500V, 10A 2SK2714 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at V gss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

Contextual Info: Transistors Switching 500V, 10A 2SK2714 ♦ F e a tu re s • E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. ,+ 0 . 3 c+0,3 - 0.1 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G a te-so urce vo lta g e gu a ra n te e d at Vass = ± 3 0 V .

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2SK2540

Abstract: 2SK2294
Contextual Info: Transistors/Leaded Type Characteristics MOS FET 1. Can be used with automatic placement machines. Available in various packages with taping for automatic placement. 2. MOS FETs operating from 4 volts These MOS FETs can be driven directly by an IC, significantly reducing the number of components buffer transistors .

2SK4111

Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Contextual Info: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: