2SK2751 Search Results

Contextual Info: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2

2SK2751

Abstract: JISC7030
Contextual Info: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET  FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO.  APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor.  ORDERING INFORMATION

"N-Channel JFET"

Abstract: list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET „ FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. „ APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L

2SK2751

Abstract: n-channel JFET sot23
Contextual Info: UTC 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES *Low noise-figure NF . *High gate to drain voltage VGDO. APPLICATIONS *For impedance conversion in low frequency. *For pyroelectric sensor. 1 2 MARKING SYMBOL 3 HS SOT-23 1: DRAIN 2: SOURCE 3: GATE

2SK2751

Abstract: JISC7030
Contextual Info: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) ● Low noise-figure (NF) ● High gate to drain voltage VGDO

2SK2751

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package Th an W is k y Th e a pro ou Fo an po du fo

3BZ marking

Abstract: C703 pyro sensor 2SK2751 C7030 "Field Effect Transistor" JK PANASONIC
Contextual Info: Panasonic S ilic o n Junction FETs S m all Sign al 2SK2751 Silicon N -C h an n el Junction For im pedance conversion in low frequency For pyro-electric sensor • Features • Low noise-figure (NF) • High gate-drain voltage V g d o • Downsizing of sets by mini-type package and automatic insertion by

2SK2751

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor ue pl d in an c

2SK2751

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET „ FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. „ APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L

Contextual Info: 2SK2751 Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For pyro-electric sensor +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Rating VGDS – 40 V Drain current ID ±10

2SK2751

Abstract: JISC7030
Contextual Info: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05

Contextual Info: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF) ● High gate to drain voltage VGDO

Contextual Info: UTC 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES *Low noise-figure NF . *High gate to drain voltage VGDO. APPLICATIONS *For impedance conversion in low frequency. *For pyroelectric sensor. 1 2 MARKING SYMBOL 3 HS SOT-23 1: DRAIN 2: SOURCE 3: GATE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features • Low noise-figure NF • High gate-drain voltage (Source open) VGDO

2SK2751

Contextual Info: Silicon Junction FETs Small Signal 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2 5˚ 2.90+0.20 –0.05 Unit −40 V Drain current ID 10

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)

k3025

Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8