2SK294 Search Results

K294

Abstract: 2SK2949 K2949
Contextual Info: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.)

2SK2941

Abstract: MP-25 transistor 2SK2941
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T his p ro d u c t is n -C h a n e l M O S Field E ffe c t T ra n s is to r d e s ig n e d high in m illim e te rs cu rre n t sw itch in g a p p lica tio n .

2SK2949

Abstract: 25VDSS
Contextual Info: 2SK2949 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2949 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.4 Ω (標準) z オン抵抗が低い。

2SK2941

Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. RDS on 1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)

2SK2945

Abstract: FM20
Contextual Info: 2SK2945 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V(BR) DSS VGSS ±30 V ID ±5 A ±20 35 (Tc = 25ºC) ID (pulse) *1 PD EAS *2 120 min 900 Ratings typ I GSS I DSS

2SK2940

Abstract: Hitachi DSA00239
Contextual Info: 2SK2940 L ,2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK

transistor 2SK2941

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T his product is n-Chanel MOS Field Effect Transistor designed high current switching application. FEATURE • Low On-Resistance RDS on i = 14 m il Typ. (V g s = 10 V, Id =18 A)

2SK2940

Abstract: Hitachi DSA0044
Contextual Info: 2SK2940 L ,2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK

Hitachi DSA002749

Contextual Info: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

Hitachi DSA002780

Contextual Info: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

TCA 150

Abstract: 2SK295 2SK294 TCA150 kdsi
Contextual Info: 2SK294.2SK295 y » j 3 > N ? -* * JU MOS F E T SILIC O N N -C H A N N EL MOS F E T * * ««* * ? y HIGH SPEED POWER SW ITCH IN G 1. Y — b ! Gate 2. K w -Í >• ! Drain 7 7 ^ iO (Flange 3. V — X ! Source (Dimensions in mm) (JE D E C T 0 -2 2 0 A B )

2SK2949

Contextual Info: TOSHIBA 2SK2949 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2949 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • Low Drain-Source ON Resistance

2SK2949

Contextual Info: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.)

2SK2940

Abstract: 2SK2940L-E 2SK2940STL-E PRSS0004AE-A
Contextual Info: 2SK2940 L , 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1054-0400 (Previous: ADE-208-563B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

2SK2949

Contextual Info: 2SK2949 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2949 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.4 Ω (標準) z オン抵抗が低い。

2SK2943

Abstract: FM20
Contextual Info: 2SK2943 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V (BR) DSS VGSS ±30 V ID ±3 A ±12 30 (Tc = 25ºC) (Ta = 25ºC) Ratings typ min 900 Unit max I GSS V I D = 100µA, VGS = 0V

Contextual Info: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.)

Contextual Info: 2SK294 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30‚ Minimum Operating Temp (øC)

Hitachi DSA00279

Contextual Info: 2SK2940 L ,2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-563B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2940(L),2SK2940(S)

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T his p ro d u c t is n -C h a n e l M O S F ield E ffe c t T ra n s is to r d e s ig n e d high in m illim e te rs c u rre n t s w itch in g a p p lica tio n .

Contextual Info: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance

K294

Abstract: 2SK2949
Contextual Info: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance

2SK2949

Contextual Info: 2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2949 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance

2SK294

Abstract: 2SK295
Contextual Info: HITACHI/{OPTOELECTRONICS} 73 149620b HI TACHI"/ ÖPTOELECTRÜM ICS — D e J M4'ikiED5 DDDTTTE 7 3 C 09992 D 2SK294,2SK295 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES -• • Low O n-Resistance. High Speed Sw itching.