2SK301 Search Results

Contextual Info: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.

Contextual Info: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

F16W60

Abstract: 2SK3012 F16W60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)

2SA20

Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Contextual Info: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

Contextual Info: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current

2sk3019

Abstract: 2SA2018
Contextual Info: UMF6N Transistors Power management dual transistors UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

2sk3019

Abstract: 2SC5585
Contextual Info: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

2SK3017

Contextual Info: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance

2SC5585

Abstract: 2SK3019
Contextual Info: UMF9N Transistors Power management dual transistors UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

2SK3019

Abstract: 4405 2SK301
Contextual Info: SPICE PARAMETER 2SK3019 by ROHM TR Div. * 2SK3019 NMOS model * Date: 2006/09/07 .MODEL 2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12

2SK3019

Abstract: EMF33
Contextual Info: EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 zApplications Power management circuit zDimensions Unit : mm EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package.

JAPAN transistor

Abstract: 30v N channel MOS FET 2SK3019 ON503
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SK3018

Abstract: UM5K1N
Contextual Info: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 ● Low noies, high gain ● High gate to drain voltage VGDO

UM5K1N

Abstract: 2SK3018 two transistor forward
Contextual Info: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.

2SC5585

Abstract: 2SK3019
Contextual Info: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

Contextual Info: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SC5585

Abstract: 2SK3019 T108 IMF9
Contextual Info: UMF9N / IMF9 Transistors Power management dual transistors UMF9N / IMF9 2SC5585 and 2SK3019 are housed independently in a UMT or SMT package. !External dimensions (Units : mm) !Application Power management circuit 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6)