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    2SK315 Search Results

    2SK315 Datasheets (56)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK315
    		Sanyo Semiconductor FM tuner high-frequency amplifiers Original PDF 178.16KB 5
    2SK315
    		Unknown Scan PDF 131.24KB 5
    2SK315
    		Unknown High Frequency Device Data Book (Japanese) Scan PDF 50.01KB 1
    2SK315
    		Unknown FET Data Book Scan PDF 92.12KB 2
    2SK315
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.12KB 1
    2SK315
    		Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF 488.64KB 3
    2SK315
    		Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF 133.61KB 1
    2SK315
    		Sanyo Semiconductor Small Signal FETs Scan PDF 168.31KB 1
    2SK315
    		Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF 356.99KB 2
    2SK3150
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 57.46KB 9
    2SK3150
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 90.29KB 9
    2SK3150(L)
    		Hitachi Semiconductor Power switching MOSFET Original PDF 57.47KB 9
    2SK3150L
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 57.48KB 9
    2SK3150(L)
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 90.3KB 9
    2SK3150L
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 67.95KB 12
    2SK3150L-E
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 90.29KB 9
    2SK3150(S)
    		Hitachi Semiconductor Power switching MOSFET Original PDF 57.47KB 9
    2SK3150S
    		Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF 57.48KB 9
    2SK3150(S)
    		Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF 90.3KB 9
    2SK3150S
    		Renesas Technology SMD, High Speed Power Amplifier, 100V 20A 50W, MOS-FET N-Channel enhanced Original PDF 91.97KB 14
    SF Impression Pixel

    2SK315 Price and Stock

    Select Manufacturer

    Rochester Electronics LLC 2SK315E-SPA-AC

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK315E-SPA-AC Bulk 2,184
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.14
    		Buy Now

    Rochester Electronics LLC 2SK315F-SPA-AC

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK315F-SPA-AC Bulk 993
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.30
    • 10000 $0.30
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    Renesas Electronics Corporation 2SK3150-90STL-E

    NCH POWER MOSFET 100V 20A 60MOHM D2PAK - Tape and Reel (Alt: 2SK3150-90STL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3150-90STL-E Reel 111 Weeks 1,000
    • 1 $5.75
    • 10 $5.75
    • 100 $5.39
    • 1000 $5.39
    • 10000 $5.39
    		Buy Now

    Renesas Electronics Corporation 2SK3155-90-E

    NCH POWER MOSFET 150V 15A 130MOHM TO220F - Trays (Alt: 2SK3155-90-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3155-90-E Tray 111 Weeks 575
    • 1 $7.05
    • 10 $7.05
    • 100 $6.61
    • 1000 $6.61
    • 10000 $6.61
    		Buy Now

    Renesas Electronics Corporation 2SK3155-E

    Power MOSFET, N Channel, 150 V, 15 A, 130 Milliohms, TO-220FM, 3 Pins, Through Hole - Trays (Alt: 2SK3155-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3155-E Tray 111 Weeks 675
    • 1 $6.00
    • 10 $6.00
    • 100 $5.63
    • 1000 $5.63
    • 10000 $5.63
    		Buy Now
    Avnet Asia 2SK3155-E 12 Weeks 675
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 2SK315 price and stock on Findchips.com

    2SK315 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 65 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220FM Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		2SK3153 O-220FM PDF

    Contextual Info: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-682A Z 2nd. Edition February 1999 Features • Low on-resistance R ds = 100 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		2SK3154 ADE-208-682A PDF

    Hitachi DSA002780

    Contextual Info: 2SK3150 L ,2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750(Z) 1st. Edition January 1999 Features • • • Low on-resistance R DS =45mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		2SK3150 ADE-208-750 D-85622 Hitachi DSA002780 PDF

    Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK


    OCR Scan     		2SK3150 PDF

    2SK3157

    Abstract: Hitachi DSA00280
    Contextual Info: 2SK3157 Silicon N Channel MOS FET High Speed Power Switching ADE-208-769A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS = 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G


    Original     		2SK3157 ADE-208-769A 220FM D-85622 2SK3157 Hitachi DSA00280 PDF

    Hitachi DSA00280

    Contextual Info: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =100 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1


    Original     		2SK3154 ADE-208-682A 220AB D-85622 Hitachi DSA00280 PDF

    HX 830

    Abstract: HITACHI DIODE 2SK3159
    Contextual Info: 2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 Z Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3159 ADE-208-774 HX 830 HITACHI DIODE 2SK3159 PDF

    2SK3154

    Abstract: 2SK3154-E PRSS0004AC-A
    Contextual Info: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 Previous: ADE-208-682A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3154 REJ03G1079-0300 ADE-208-682A) PRSS0004AC-A O-220AB) 2SK3154 2SK3154-E PRSS0004AC-A PDF

    2SK3140

    Abstract: 2SK3156 2SK3156-E PRSS0004AC-A
    Contextual Info: 2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0300 Previous: ADE-208-683A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3156 REJ03G1081-0300 ADE-208-683A) PRSS0004AC-A O-220AB) 2SK3140 2SK3140 2SK3156 2SK3156-E PRSS0004AC-A PDF

    2SK3157

    Abstract: 2SK3157-E PRSS0003AD-A
    Contextual Info: 2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 Previous: ADE-208-769A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3157 REJ03G1082-0300 ADE-208-769A) PRSS0003AD-A O-220FM) 2SK3157 2SK3157-E PRSS0003AD-A PDF

    2SK3154

    Abstract: Hitachi DSA00239
    Contextual Info: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		2SK3154 ADE-208-682A 220AB 2SK3154 Hitachi DSA00239 PDF

    2SK3152

    Abstract: A1002 Hitachi DSA00239
    Contextual Info: 2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM


    Original     		2SK3152 ADE-208-732 220FM 2SK3152 A1002 Hitachi DSA00239 PDF

    2SK315

    Abstract: DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo
    Contextual Info: S ANYO SEMICONDUCTOR 2SK315 CORP 15E D I 7TT?Q7b 1 00053^7 T- 3J~2 ^ I N -C h a n n e l Ju n c tio n Silico n F ie ld -E ffe ct Transistor 2040 FM Tuner Applications 1005B Features Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact.


    OCR Scan     		2SK315 1005B 0DGB752 DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo PDF

    Hitachi DSA002749

    Contextual Info: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220AB


    Original     		2SK3154 ADE-208-682A 220AB Hitachi DSA002749 PDF

    Hitachi DSA002749

    Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 D 4 1


    Original     		2SK3150 Hitachi DSA002749 PDF

    Hitachi DSA0076

    Abstract: 2SK3153
    Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching ADE-208-733A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =65mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		2SK3153 ADE-208-733A 220FM Hitachi DSA0076 2SK3153 PDF

    2SK3150

    Abstract: Hitachi DSA00347
    Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3150 ADE-208-750A Hitachi DSA00347 PDF

    2SK315

    Contextual Info: Ordering number:EN1005B N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Package Dimensions • Ideal for FM tuners in radios, stereos, etc. · Because it is compactly packaged, sets can be made compact. · Small Crss Crss=0.08pF typ . · High yfs (yfs=12.0ms typ).


    Original     		EN1005B 2SK315 2SK315] 2SK315 PDF

    2SK3150

    Abstract: Hitachi DSA0076
    Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750B (Z) 3rd. Edition Mar. 2001 Features • Low on-resistance R DS =45mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		2SK3150 ADE-208-750B Hitachi DSA0076 PDF

    Contextual Info: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • L ow on-resistance • on = 11.5 m il typ. H igh speed sw itching • 4 V gate drive device can be driven from 5 V source r ds Outline TO-3P Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		2SK3151 PDF

    Contextual Info: 2SK3159 Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • • • Low on-resistance R ds = 23 m ii typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P 1. Gate 2. Drain Flange 3. Source ADE-208-774 (Z)


    OCR Scan     		2SK3159 ADE-208-774 PDF

    2sk3155

    Abstract: Hitachi DSA00280
    Contextual Info: 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C Z 4th. Edition Feb. 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G


    Original     		2SK3155 ADE-208-768C 220FM D-85622 2sk3155 Hitachi DSA00280 PDF

    2SK3153

    Abstract: 2SK3153-E PRSS0003AD-A
    Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 Previous: ADE-208-733A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		2SK3153 REJ03G1078-0300 ADE-208-733A) PRSS0003AD-A O-220FM) 2SK3153 2SK3153-E PRSS0003AD-A PDF

    ADE-208-747B

    Abstract: 2SK3151 2SK3151-E PRSS0004ZE-A SC-65
    Contextual Info: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 Previous: ADE-208-747B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3151 REJ03G1076-0400 ADE-208-747B) PRSS0004ZE-A ADE-208-747B 2SK3151 2SK3151-E PRSS0004ZE-A SC-65 PDF