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    2SK3391 Search Results

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    2SK3391 Price and Stock

    Rochester Electronics LLC 2SK3391JX

    RF MOSFET 13.7V UPAK
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    DigiKey 2SK3391JX Bulk 86
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    • 100 $3.52
    • 1000 $3.52
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    Renesas Electronics Corporation 2SK3391JX

    Trans RF MOSFET N-CH 17V 0.3A 4-Pin(3+Tab) UPAK
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    Verical 2SK3391JX 134,038 91
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    • 100 $3.975
    • 1000 $3.5875
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    Rochester Electronics 2SK3391JX 134,038 1
    • 1 $3.38
    • 10 $3.38
    • 100 $3.18
    • 1000 $2.87
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    Renesas Electronics Corporation 2SK3391JX01UL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK3391JX01UL 7,088 2
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    • 100 $1.5681
    • 1000 $1.3776
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    Quest Components 2SK3391JX01UL 5,670
    • 1 $4.5
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $1.575
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    2SK3391 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3391 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3391 Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391 Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391 Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391JX Renesas Technology Original PDF
    2SK3391JXTL Renesas Technology RF FETs, Discrete Semiconductor Products, MOSFET N-CH 17V 300MA UPAK Original PDF
    2SK3391JXTL-E Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF

    2SK3391 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0300 PLZZ0004CA-A

    2SK3391

    Abstract: 2SK3391JX
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0200Z ADE-208-847 2SK3391 2SK3391JX

    2SK3391

    Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0300 PLZZ0004CA-A 2SK3391 2SK3391JXTL-E on 543 upak 319 0048 0 00 440

    2SK3391

    Abstract: DSA003644
    Text: 2SK3391 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-847 Z 1st. Edition Aug. 2001 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd= 58 % min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK3391 ADE-208-847 D-85622 D-85619 2SK3391 DSA003644

    2SK3391

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 2SK3391

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SK3391

    Abstract: 2SK3391JXTL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as