2SK346 Search Results

2SK3467

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode

2sk3469

Abstract: 2SK3469-01MR *k3469
Contextual Info: 2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3461

Abstract: Hitachi DSA0076
Contextual Info: 2SK3461 L , 2SK3461(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-944 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate

Contextual Info: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

2SK3460 equivalent

Abstract: 2SK3460 FM20
Contextual Info: 2SK3460 Absolute Maximum Ratings Ta = 25ºC Ratings Unit Symbol VDSS 150 V V(BR) DSS min 150 +20, –10 V ID ±18 A VTH 1.0 ±72 A Re (yfs) 13 EAS *2 35 (Tc = 25ºC) W Ratings typ I GSS VGSS PD I DSS RDS(on) (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V

2SK3466

Abstract: k3466
Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)

2Sk3462

Contextual Info: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • • • • • 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)

Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

k3462

Contextual Info: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

k3462

Contextual Info: 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS

2SK3466

Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

K346

Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3466

Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3462

Abstract: K3462
Contextual Info: 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)

2SK3468-01

Contextual Info: 2SK3468-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

M2SK3467

Abstract: d1499 2SK3467 2SK3467-Z MP-25 MP-25Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3467 N チャネル パワーMOS FET スイッチング用 工業用 2SK3467 は，N チャネル MOS FET でオン抵抗が低く，スイッチング特性が優れており，同期整流方式 DC/DC コンバー

2SK3466

Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3466

Abstract: transistor MJ 122
Contextual Info: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) · High forward transfer admittance: ïYfsï = 4.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)

Contextual Info: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A

tc 122 25 5

Abstract: 2SK3466
Contextual Info: 2SK3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)

k3462

Abstract: 2SK3462 K346
Contextual Info: 2SK3462 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3462 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 5.2 ± 0. 2 • 4 V 駆動です。 • オン抵抗が低い。

Contextual Info: 2SK3468-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A