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Panasonic Electronic Components 2SK3539G0L MOSFET N-CH 50V 100MA SMINI3-F2
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2SK3539G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
2SK3539G0L		Panasonic	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P		Original	PDF		4

2SK3539G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3539G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y	Original	2002/95/EC) 2SK3539G 2SK3539G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) 2SK3539G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na	Original	2002/95/EC) 2SK3539G	PDF
2SK3539G Abstract: YP diode code marking Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Gate protection diode built-in	Original	2002/95/EC) 2SK3539G 2SK3539G YP diode code marking	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features  Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half	Original	2002/95/EC) UP04878G 2SK3539G	PDF
2SK3539G Abstract: UP04878G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features  Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half	Original	2002/95/EC) UP04878G 2SK3539G 2SK3539G UP04878G	PDF
MS701 Abstract: 2SJ0672 2SK3539G UP04979 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode	Original	2002/95/EC) UP04979G 2SJ0672 2SK3539G MS701 2SJ0672 2SK3539G UP04979	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
2SJ0672 Abstract: 2SK3539G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode	Original	2002/95/EC) UP04979G 2SJ0672 2SK3539G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Features  Package  High-speed switching  Incorporating a built-in gate protection-diode	Original	2002/95/EC) UP04979G 2SJ0672 2SK3539G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half	Original	2002/95/EC) UP04878G 2SK3539G	PDF

2SJ0672 Abstract: 2SK3539G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode	Original	2002/95/EC) UP04979G 2SJ0672 2SK3539G	PDF
mip411 Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode	Original	2002/95/EC) UP04979G 2SJ0672 2SK3539G	PDF
UP04878G Abstract: 2SK3539G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half	Original	2002/95/EC) UP04878G 2SK3539G UP04878G 2SK3539G	PDF