2SK386 Search Results

2SK386

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK386 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATION'S. Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. X- 20.5MAX. ^3.3±Q2 d— -1Tm

k3869

Abstract: 2SK3869 K386
Contextual Info: 2SK3869 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3869 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)

K3863

Abstract: 2SK3863 2SK386 K386
Contextual Info: 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)

Toshiba K3869

Abstract: K3869 Transistor K3869 2SK3869
Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

k3868

Abstract: 2SK3868 transistor Toshiba K3868 K386
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

k3868

Abstract: 2SK3868 transistor Toshiba K3868
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)

k3869

Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

K3869 Transistor

Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

k3863

Abstract: K386 2SK3863
Contextual Info: 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

2SK3866

Abstract: 2SK3866G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

k3868

Abstract: 2SK3868 k386
Contextual Info: 2SK3868 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3868 ○ スイッチングレギュレータ用 単位: mm z 高速フリーホイリングダイオードを内蔵しています。 : trr = 150 ns (標準) : RDS(ON) = 1.3 Ω (標準)

2sk3866

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV

2SK3866

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: TOSHIBA {DISCRETE/OPTOJ DE I ^ 0 ^ 7 5 5 0 O O l b b b E 2 99D 16662 9097250 TOSHIBA <DISCRETE/OPTO SEMICONDUCTOR D T ^ cj^ TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE Æ - M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

K3869

Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386
Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

DIODE MARKING GV 285

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV

transistor Toshiba K3868

Abstract: k3868 2SK3868 k386 transistor MJ 122
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

Contextual Info: 2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3864 PDP Sustain Circuit Applications Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) High forward transfer admittance: |Yfs| = 75 S (typ.)

2SK3866

Abstract: 2SK3866G DIODE MARKING GV 2sk38
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

K3869

Abstract: K3869 Transistor Toshiba K3869 2SK3869
Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

k3868

Abstract: 2SK3868 transistor Toshiba K3868
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)