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    2SK386 Price and Stock

    Toshiba America Electronic Components 2SK3868(Q,M)

    MOSFET N-CH 500V 5A TO220SIS
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    DigiKey 2SK3868(Q,M) Bulk
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    Toshiba America Electronic Components 2SK386

    POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 450V, 0.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK386 104
    • 1 $4
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    2SK386 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK386 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK386 Toshiba Original PDF
    2SK386 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK386 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK386 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK386 Unknown Scan PDF
    2SK386 Unknown Scan PDF
    2SK386 Unknown MOS FET Scan PDF
    2SK386 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK386 Unknown FET Data Book Scan PDF
    2SK386 Toshiba TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,10A I(D),TO-247VAR Scan PDF
    2SK386/1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK386/2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3863 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Original PDF
    2SK386/3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3863(TE16L1,Q) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5A DP Original PDF
    2SK386/4 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK386/5 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK386/6 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3868 Toshiba MOSFET 2SK/2SJ Series Original PDF

    2SK386 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3869

    Abstract: 2SK3869 K386
    Text: 2SK3869 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3869 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		PDF 2SK3869 SC-67 2-10U1B 100us* k3869 2SK3869 K386

    K3863

    Abstract: 2SK3863 2SK386 K386
    Text: 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		PDF 2SK3863 K3863 2SK3863 2SK386 K386

    Toshiba K3869

    Abstract: K3869 Transistor K3869 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 Toshiba K3869 K3869 Transistor K3869 2SK3869

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868 K386
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3868 k3868 2SK3868 transistor Toshiba K3868 K386

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)


    Original     		PDF 2SK3868 k3868 2SK3868 transistor Toshiba K3868

    k3869

    Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 k3869 Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869

    K3869 Transistor

    Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 K3869 Transistor Toshiba K3869 2SK3667,2SK3869,K3869,

    k3863

    Abstract: K386 2SK3863
    Text: 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3863 k3863 K386 2SK3863

    2SK3866

    Abstract: 2SK3866G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK3866G 2SK3866 2SK3866G

    k3868

    Abstract: 2SK3868 k386
    Text: 2SK3868 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3868 ○ スイッチングレギュレータ用 単位: mm z 高速フリーホイリングダイオードを内蔵しています。 : trr = 150 ns (標準) : RDS(ON) = 1.3 Ω (標準)


    Original     		PDF 2SK3868 SC-67 2-10U1B k3868 2SK3868 k386

    2sk3866

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SK3866 2sk3866

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SK3866G

    2SK3866

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK3866 2SK3866

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK3866

    DIODE MARKING GV 285

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SK3862 DIODE MARKING GV 285

    transistor Toshiba K3868

    Abstract: k3868 2SK3868 k386 transistor MJ 122
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3868 transistor Toshiba K3868 k3868 2SK3868 k386 transistor MJ 122

    Untitled

    Abstract: No abstract text available
    Text: 2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3864 PDP Sustain Circuit Applications Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) High forward transfer admittance: |Yfs| = 75 S (typ.)


    Original     		PDF 2SK3864

    2SK3866

    Abstract: 2SK3866G DIODE MARKING GV 2sk38
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV


    Original     		PDF 2002/95/EC) 2SK3866G 2SK3866 2SK3866G DIODE MARKING GV 2sk38

    K3869

    Abstract: K3869 Transistor Toshiba K3869 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 K3869 K3869 Transistor Toshiba K3869 2SK3869

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3868 k3868 2SK3868 transistor Toshiba K3868

    2SK386

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK386 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATION'S. Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. X- 20.5MAX. ^3.3±Q2 d— -1Tm


    OCR Scan     		PDF 2SK386 100nA 2SK386

    A45A

    Abstract: SO402 2SK386 j2f3 16664
    Text: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 100nA A45A SO402 2SK386 j2f3 16664

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTOJ DE I ^ 0 ^ 7 5 5 0 O O l b b b E 2 99D 16662 9097250 TOSHIBA <DISCRETE/OPTO SEMICONDUCTOR D T ^ cj^ TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE Æ - M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2SK386

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115