2SK40 Search Results

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4059CT Category: Transistors /Small-Signal FETs/Junction FETs Single

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4071 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4071 is the best switching element for the DC-DC φ 5.2 MAX. converter usage to 24 V in the direct current input voltage. 5.5 MAX. It excels in the switching characteristics in low on-state

Contextual Info: 2SK4044 Ordering number : ENA0214 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4044 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications

Contextual Info: 2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS VI 2SK4016 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.)

SCHEMATIC 5kw power supply 30A

Abstract: 2SK4042
Contextual Info: 2SK4042 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK4042 ○ スイッチングレギュレータ用 単位: mm z 高速フリーホイリングダイオードを内蔵しています。 z 逆回復時間が速い。

D1843

Abstract: 2SK4095 2SK4095-AZ 2SK4095-T-AZ SC-43A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4095 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4095 is the best switching element for the DC-DC φ 5.2 MAX. converter usage from 24 to 48 V in the direct current input

2SK4034

Abstract: V4160
Contextual Info: 2SK4034 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅢ 2SK4034 ○ リレー駆動､DC-DC コンバータ用 ○ モータドライブ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 110 S (標準)

Contextual Info: Ordering number : ENA0523B 2SK4094 N-Channel Power MOSFET http://onsemi.com 60V, 100A, 5mΩ, TO-220-3L Features • • • ON-resistance RDS on 1=3.8mΩ (typ.) Input capacitance Ciss=12500pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C

2SK4019

Contextual Info: 2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOS V 2SK4019 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 z 4-V gate drive 0.6 MAX. z High forward transfer admittance: |Yfs| = 4.5 S (typ.)

2SK4015

Contextual Info: 2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS VI 2SK4015 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.)

2SK4020

Abstract: K4020
Contextual Info: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.56 Ω (typ.)

K4089

Abstract: 2SK4089LS
Contextual Info: 2SK4089LS Ordering number : ENA0557 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4089LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

D1877

Abstract: 2SK4092 2SK4092-A MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: 2SK4063LS Ordering number : ENA0397A N-Channel Silicon MOSFET 2SK4063LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

Contextual Info: 2SK4065 Ordering number : ENA0324 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4065 General-Purpose Switching Device Applications Features • • • Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications

K4097

Abstract: 2SK4097LS K4097 DATASHEET ENA0775 DSA0028595 2SK4097
Contextual Info: 2SK4097LS Ordering number : ENA0775 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4097LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

k4033

Abstract: 2SK4033 K403 TRANSISTOR TC 100
Contextual Info: 2SK4033 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOS III 2SK4033 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.07 Ω (typ.) High forward transfer admittance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK4069

Abstract: mp3zk
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY

2SK40

Abstract: 2SK40 C 2SK10 2SK-10
Contextual Info: HITACHI 2SK40-SILICON N-CHANNEL JUNCTION FEI LOW FREQUENCY LOW NOISE AMPLIFIER a c-i i, Styrcí 2 Calí 3 IViÉtn U in v n u fliK 'i im>i> MAXIMUM CHANNEL POWER DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS (Tii=25°C I leíin 2SK¿0 Symbol Un«

K4017

Abstract: 2SK4017
Contextual Info: 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOS III 2SK4017 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ６．５±０．２ ５．２±０．２ ０．６ MAX． Low leakage current

2SK408

Abstract: POWER MOS FET 2sk408 2SK409 VM-50V D15mm
Contextual Info: blE » • 4^1=205 0013055 033 ■ HITM 2SK408,2SK409 HI T ACH I/{OPTOELECTRONIC S IL IC O N N -C H A N N EL M O S F ET 2SK408 HF/VHF POWER AMPLIFIER 2SK409 IE ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.