2SK878 Search Results
2SK878 Datasheets Context Search
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Contextual Info: 2SK878-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m |
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2SK878-2 | |
2SK878Contextual Info: SONY CORP/COflPONENT PRODS IflE D • A3fl23fl3 OOOElbO T ■ 2SK878 SONY AIGaAs/GaAs Low Noise Microwave HEMT T - 31-25 Package Outline Description U n it: mm The 2 S K 8 7 8 is an A IG aA s/G aA s H EM T fabricated by MOCVD M etal Organic C hem ical Vapor Deposition . T h is 0 .5 m icron gate FET |
OCR Scan |
A3fl23fl3 2SK878 temper46 T-31-25 12GHz 2SK878 | |
2SK752
Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
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2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 NEC diode 3N125 3N126 2SK791 3N105 3N134 82230 |