2A 400V MOSFET Search Results

3n40

Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDD3N40TM

Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

FDT3N40

Contextual Info: TM UniFET FDT3N40 400V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 2A, 400V, RDS on = 3.4 @VGS = 10 V • Low gate charge ( typical 4.5 nC)

FDT3N40

Abstract: FDT3N40TF JESD51-3
Contextual Info: TM UniFET FDT3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 4.5 nC)

STD2NB40

Contextual Info: STD2NB40 N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD2NB40 400 V <4Ω 2A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STD2NB40

Contextual Info: STD2NB40 N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD2NB40 400 V <4Ω 2A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

RE26A

Contextual Info: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N40K-TA Power MOSFET 2A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N40K-TA is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N40 Preliminary Power MOSFET 2A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior

d2nb4

Abstract: STD2NB40 D2NB40
Contextual Info: STD2NB40  N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST D2NB40 • ■ ■ ■ ■ ■ V DSS R DS on ID 400 V < 4Ω 2 A TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: PA09 •PA09A APEX MICROTECHINJOLOGY CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-5-46-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/^s PROTECTED OUTPUT STAGE — Thermal shutoff

Contextual Info: M3Q5271 ^ 0053771 ET? • HAS HARRIS 2 N 6 7 9 2 N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Features Package T D -2 0 5 A F • 2A, 400V BOTTOM VIEW • rDS on = 1-8n • SOA is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds

inductor 100mH

Abstract: PA09 PA09A
Contextual Info: VIDEO POWER OPERATIONAL AMPLIFIERS PA09 • PA09A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/µs

Contextual Info: VIDEO POWER OPERATIONAL AMPLIFIERS PA09 • PA09A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/µs

Contextual Info: VIDEO POWER OPERATIONAL AMPLIFIERS PAO9 • PAO9 A M I C R O T E C H N O L O G Y h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • PCWffl MCSTECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT— 150WHz • VfflY FAST SLB/V RATE — 400V/ |as

DC4060

Abstract: c40400 AQW254 AQW254A AQW254AX AQW254AZ
Contextual Info: PhotoMOS MOSFET PhotoMOS MOSFET输出光电耦合器 输出光电耦合器) HE 2a 尺寸图 对应RoHS 分类与电路构成 动作原理的说明 P.240 P.244 P.236 术语说明 使用注意事项 P.245 应用电路示例 P.246 标准认证一览 P.252 P.1129

Contextual Info: SKI Harris S E M I C O N D U C T O R 2N7281D, 2N7281R 2N72S1H REGISTRATION PENDING Currently Available as FRL430 D, R, H u -i -j Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 2A, 500V, RDS(on) = 2.501} TQ-205AF • Second Generation Rad Hard MOSFET Result« From New Design Concepts

Contextual Info: H a r r is I J U S E M I C O N D U C T O R FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 2A, 500V, RDS on = 2.5012 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7281D 2N7281H 2N7281R 3E12 FRL430
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 2A, 500V, RDS(on) = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: 2N6800 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 400V 3.0A Ω

Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts

AN-8831

Abstract: 2E12 2N7280D 2N7280H 2N7280R 3E12 2N728
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM430 D, R, H 2N7280D, 2N7280R 2N7280H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 3A, 500V, RDS(on) = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts