2A00 Search Results

Assmann Electronics

Contextual Info: RoHS compliant ASSMANN Electronics, Inc. AWHXXG-0202-IDC-R ASM3120-2A002 2.54mm ejector header, IDC type

JIS-C5201-1

Abstract: ERA2A
Contextual Info: Ｓｕｂｊｅｃｔ Spec. No. Metal Film Chip Resistor PRODUCT SPECIFICATION FOR INFORMATION 151-SRA-2A00AE Part.No. 1 of 8 ERA2A 1. Dimension L a a W 1 (2) (3) (4) (5) (1) (2) (3) (4) (5) (6) Substrate: Alumina Protective Coating: Epoxy Resin Resistive Element: High reliability metal Alloy

Contextual Info: 10 □ATE CODE YYOOO 2A00M AX EXTRACTION PART NO. (78279-XXXX) O.AO PEG CENTER TO MODULE SEATING FACE (R OF MODULE CONNECTOR, MODULE SEATING PLANE -3.30*0.25 SECTION Z-Z NOTE: 1.MATERIAL: HOUSING UNLOCK LCP - UL9XV-0, COLOR: BLACK LOCK CONTACTS : COPPER ALLOY

Contextual Info: RoHS compliant ASSMANN ASM3120-2A001 Electronics, Inc. 2.54mm ejector header, IDC type AWHXX-E202-IDC-R

Contextual Info: RoHS compliant ASSMANN ASM3120-2A001 Electronics, Inc. 2.54mm ejector header, IDC type AWHXXG-E202-IDC-R

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

PAXI

Contextual Info: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F0830 Series Product Specification PS025107-1206 This publication is subject to replacement by a later edition. To determine whether a later edition exists, or to request copies of publications, visit www.zilog.com.

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: TMS320DM6446 www.ti.com SPRS283H – DECEMBER 2005 – REVISED SEPTEMBER 2010 TMS320DM6446 Digital Media System-on-Chip Check for Samples: TMS320DM6446 1 Digital Media System-on-Chip DMSoC 1.1 Features 12 • High-Performance Digital Media SoC – 513-, 594-, 810-MHz C64x+ Clock Rates

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

Contextual Info: SM320C6455-EP FIXED-POINT DIGITAL SIGNAL PROCESSOR Data Manual JANUARY 2008 SPRS462B SM320C6455-EP FIXED-POINT DIGITAL SIGNAL PROCESSOR Data Manual Literature Number: SPRS462B SEPTEMBER 2007 – Revised JANUARY 2008 PRODUCTION DATA information is current as of publication date.

Contextual Info: TMS320DM365 SPRS457E – MARCH 2009 – REVISED JUNE 2011 www.ti.com TMS320DM365 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM365 1 TMS320DM365 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

mjcp

Abstract: CCIR 656 GIO40
Contextual Info: TMS320DM368 SPRS668C – APRIL 2010 – REVISED JUNE 2011 www.ti.com TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

TMS320C5000

Abstract: XDS100 TMS320C5514
Contextual Info: TMS320C5514 SPRS646D – AUGUST 2010 – REVISED APRIL 2011 www.ti.com TMS320C5514 Fixed-Point Digital Signal Processor Check for Samples: TMS320C5514 1 Fixed-Point Digital Signal Processor 1.1 Features 12 • High-Performance, Low-Power, TMS320C55x Fixed-Point Digital Signal Processor

29F032B

Abstract: m29f032b
Contextual Info: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology