PG12FBUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
PG12FBUSC
PG12FBUSC
|
PG12FBUSV
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
|
Original
|
PDF
|
PG12FBUSV
PG12FBUSV
|
marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
|
Original
|
PDF
|
OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
|
Original
|
PDF
|
OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
|
Original
|
PDF
|
OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
|
MARKING 2F SOT23
Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
BC850
OT-23
MARKING 2F SOT23
sot23 marking 2f
2f bc850
BC850
marking 2f 3
|
Untitled
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
|
Original
|
PDF
|
MMBT2907A
MMBT2907A
OT-23
QW-R206-030
|
pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
|
Original
|
PDF
|
MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
|
pnp 2f
Abstract: marking 2F
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR
|
Original
|
PDF
|
MMBT2907A
MMBT2907A
OT-323
QW-R220-001
pnp 2f
marking 2F
|
2F PNP SOT23
Abstract: marking 2f 2f transistor SOt23
Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
|
Original
|
PDF
|
MMBT2907A
OT-23
OT-23
MMBT2222A)
-150mA
-15mA
-10mA
-500mA
2F PNP SOT23
marking 2f
2f transistor SOt23
|
2907 TRANSISTOR PNP
Abstract: 2907 2907 pnp 2907 pnp transistor
Text: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
|
Original
|
PDF
|
Q68000-A8300
OT-89
2907 TRANSISTOR PNP
2907
2907 pnp
2907 pnp transistor
|
Untitled
Abstract: No abstract text available
Text: iC-TL85 TO46-2F Infrared LED Rev B2, Page 1/4 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ Illumination for high resolution optical encoder ♦ Modulated light barriers Emission peak at 850 nm matched to silicon sensors Temperature range -40 to 125 °C
|
Original
|
PDF
|
iC-TL85
O46-2F
iC-TL85
|
phison
Abstract: No abstract text available
Text: PS3006 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3‐5833899‐3001 or 1001 or 1005 Fax： 886‐3‐5833666 Phison PS3006 Controller Version 1.2 1 11/14/2007 PS3006
|
Original
|
PDF
|
PS3006
PS3006
85pin
TQFP100
BGA85
phison
|
atmel 951
Abstract: 4267C mcga
Text: MCGA 472 Multi Layer Column Grid Array MCGA Package Drawings Code: 2C and 2G (grounded lid) Date: 24/04/03 Rev. C 4267C–AERO–07/07 1 MCGA349 Code: 2E and 2H (grounded lid) Date: 06/2003 2 4267C–AERO–07/07 MCGA625 Code : 2F (grounded lid) Date : 27/03/2007
|
Original
|
PDF
|
4267C
MCGA349
MCGA625
SP-010.
atmel 951
mcga
|
|
|
CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
|
OCR Scan
|
PDF
|
CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
|
Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
|
OCR Scan
|
PDF
|
CMBT2907
CMBT2907A
150mA;
|
Untitled
Abstract: No abstract text available
Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR
|
OCR Scan
|
PDF
|
CMBT2907
CMBT2907A
CMBT2907
150mA;
|
BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
|
OCR Scan
|
PDF
|
BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
|
MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
|
OCR Scan
|
PDF
|
Q68000-A8300
OT-89
EHP00899
MARKING 7A SOT89
SXT2907
SXT2907A
T2907A
|
2907 TRANSISTOR PNP
Abstract: transistor 2907 Q68000-A8300 MARKING 7C
Text: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E
|
OCR Scan
|
PDF
|
Q68000-A8300
OT-89
----VBE-20V
fl53SbDS
23SLDS
Q155blfl
2907 TRANSISTOR PNP
transistor 2907
MARKING 7C
|
IC marking jw
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_
|
OCR Scan
|
PDF
|
BC849
BC850
BC849B
BC849C
BC850B
100frequency
IC marking jw
BC849
BC849B
BC849C
BC850
BC850B
BC850C
|
smd diode schottky code marking 2F
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: B 1-COLOR O P E R A T I N G DIALIGHT P/N CATHODE MARKING COLOR CHARACTERISTICS mA M I N . TY P . M A X . .149/.134 [3.80/3.40] 5 9 7 - 2 0 0 1 - 2 1 3F 5 9 7 - 2 0 0 1 -202F RED 5 9 7 - 2 3 0 1 - 2 1 3F 597-2301 -2 0 2F GREEN 5 9 7 - 2 4 0 1 - 2 1 3F 5 9 7 - 2 4 0 1 -202F
|
OCR Scan
|
PDF
|
-202F
16mm2
|
Untitled
Abstract: No abstract text available
Text: , anM n ETMST?¿SSmS!enmSt^dcrZmil\ or In pwt. fer mmtaotur* or M h Ik « |« m n w Dm ta f h m l '• aM nat *» prior oonowt, * ttaifli»r rtght ■ li -g *-• *— W Infcwwat&i In M i 6,00±0,£5 œ. n o +1 2f n ' TOLERANCE +/-0.03 4 3 2 1 REVISIONS
|
OCR Scan
|
PDF
|
L17H2112120
|
