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    2GM SOT-23 TRANSISTOR Search Results

    2GM SOT-23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    2GM SOT-23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBTA56 -10mA -100mA -100mA, 100MHz

    MMBTA56LT1

    Abstract: marking code 2GM SOT 23
    Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage


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    PDF MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1 OT-23 marking code 2GM SOT 23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V


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    PDF LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB)

    2GM sot

    Abstract: MMBTA56LT1 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3
    Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage


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    PDF MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1/D 2GM sot 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3

    Marking 2GM

    Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80


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    PDF LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) LMBTA55LT1G OT-23 Marking 2GM LMBTA56LT1G LMBTA56 2GM sot 2GM j sot23 6 device Marking 2GM 4

    2GM sot

    Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1 MMBTA56LT3 2gm marking code
    Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector–Base Voltage –60 –80 VCBO MMBTA55 MMBTA56 Emitter–Base Voltage


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    PDF MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 r14525 MMBTA55LT1/D 2GM sot MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT3 2gm marking code

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    PDF LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    PDF LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
    Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80


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    PDF MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
    Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80


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    PDF MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1

    Untitled

    Abstract: No abstract text available
    Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage


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    PDF MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) AmbientMBTA56LT1 100mAdc, 10mAdc)

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR( PNP ) SOT—23 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage VCBO : MMBTA55: -60 V


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    PDF OT-23 MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 MMBTA56

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR( PNP ) SOT—23 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current


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    PDF OT-23 MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 MMBTA56 MMBTA56LT1:

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage


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    PDF MMBTA55 MMBTA56 MMBTA55LT1 MMBTA56LT1 MMBTA56LT1 MMBTA55LT1 r14525 MMBTA55LT1/D

    marking 2GM

    Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80


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    PDF MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) MMBTA55LT1 100mAdc, 10mAdc) marking 2GM 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA56

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage


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    PDF MMBTA55 MMBTA56 MMBTA55LT1 MMBTA56LT1 MMBTA56LT1 MMBTA55LT1 MMBTA55LT1/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO


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    PDF LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) 100mAdc, 10mAdc)

    Untitled

    Abstract: No abstract text available
    Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage


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    PDF MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) 100mAdc, 10mAdc)

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
    Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1* PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage


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    PDF MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 r14525 MMBTA55LT1/D MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1

    SOT 363 marking CODE 2H

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector – Emitter Voltage


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    PDF MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) SOT 363 marking CODE 2H

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original
    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    transistor tic 2250

    Abstract: No abstract text available
    Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range


    OCR Scan
    PDF MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 OT-23 950TPY 037TPY transistor tic 2250