Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA56
-10mA
-100mA
-100mA,
100MHz
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MMBTA56LT1
Abstract: marking code 2GM SOT 23
Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage
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MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1
MMBTA55
MMBTA56
MMBTA55LT1
OT-23
marking code 2GM SOT 23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
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2GM sot
Abstract: MMBTA56LT1 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3
Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage
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MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1
MMBTA55
MMBTA56
MMBTA55LT1/D
2GM sot
2gm marking code
2gm transistor
MMBTA55
MMBTA55LT1
MMBTA55LT3
MMBTA56
MMBTA56LT1G
MMBTA56LT3
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Marking 2GM
Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
OT-23
Marking 2GM
LMBTA56LT1G
LMBTA56
2GM sot
2GM j
sot23 6 device Marking
2GM 4
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2GM sot
Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1 MMBTA56LT3 2gm marking code
Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector–Base Voltage –60 –80 VCBO MMBTA55 MMBTA56 Emitter–Base Voltage
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MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1
MMBTA55
MMBTA56
r14525
MMBTA55LT1/D
2GM sot
MMBTA55
MMBTA55LT1
MMBTA55LT3
MMBTA56
MMBTA56LT3
2gm marking code
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55LT1G
LMBTA56LT1G
S-LMBTA55LT1G
S-LMBTA56LT1G
AEC-Q101
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55LT1G
LMBTA56LT1G
S-LMBTA55LT1G
S-LMBTA56LT1G
AEC-Q101
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
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MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80
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MMBTA55LT1/D
MMBTA55LT1
MMBTA56LT1*
MMBTA55
MMBTA56
236AB)
MMBTA56LT1
MMBTA55LT1/D*
MMBTA55
MMBTA55LT1
MMBTA56
MMBTA56LT1
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MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80
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MMBTA55LT1/D
MMBTA55LT1
MMBTA56LT1*
MMBTA55
MMBTA56
236AB)
MMBTA56LT1
MMBTA55LT1/D*
MMBTA55
MMBTA55LT1
MMBTA56
MMBTA56LT1
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Untitled
Abstract: No abstract text available
Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
236AB)
AmbientMBTA56LT1
100mAdc,
10mAdc)
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR( PNP ) SOT—23 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage VCBO : MMBTA55: -60 V
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OT-23
MMBTA55LT1
MMBTA56LT1
MMBTA55:
MMBTA56:
MMBTA55
MMBTA56
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR( PNP ) SOT—23 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current
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OT-23
MMBTA55LT1
MMBTA56LT1
MMBTA55:
MMBTA56:
MMBTA55
MMBTA56
MMBTA56LT1:
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage
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MMBTA55
MMBTA56
MMBTA55LT1
MMBTA56LT1
MMBTA56LT1
MMBTA55LT1
r14525
MMBTA55LT1/D
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marking 2GM
Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
236AB)
MMBTA55LT1
100mAdc,
10mAdc)
marking 2GM
2GM transistor
marking M29
MMBTA56LT1
M292
2GM j
MMBTA56
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage
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MMBTA55
MMBTA56
MMBTA55LT1
MMBTA56LT1
MMBTA56LT1
MMBTA55LT1
MMBTA55LT1/D
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
100mAdc,
10mAdc)
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Untitled
Abstract: No abstract text available
Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
236AB)
100mAdc,
10mAdc)
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MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1* PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
r14525
MMBTA55LT1/D
MMBTA55
MMBTA55LT1
MMBTA56
MMBTA56LT1
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SOT 363 marking CODE 2H
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80 Vdc –60 –80 Vdc Collector – Emitter Voltage
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
236AB)
SOT 363 marking CODE 2H
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MMBF4856
Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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226AA)
226AE)
MMSD1000T1
236AB
MMBF0201NLT1
MMBF0202PLT1
MMBF4856
pin configuration NPN transistor BC547 sot-23
BC337/BC327
BC547 sot package sot-23
t6661
bipolar transistor bc107
MPS6595
zt751
FET Transistor Guide
BS107 MOTOROLA
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BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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transistor tic 2250
Abstract: No abstract text available
Text: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range
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OCR Scan
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PDF
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MMBTA55LT1
MMBTA56LT1
MMBTA55:
MMBTA56:
MMBTA55
OT-23
950TPY
037TPY
transistor tic 2250
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