2KX8 SRAM Search Results

hm65161-2

Abstract: 65161
Contextual Info: IlM lI September 198Ç HM 65161 DATA SHEET 2kX8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME MILITARY: 90 ns max INDUSTRIAL : 80 ns (max) COMMERCIAL : 70 ns (max) LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 25 nW (typ) DATA RETENTION : 4 |iW (typ)

Hitachi 1024k*8 SRAM

Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Contextual Info: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8

65162

Abstract: transistor fn 1016
Contextual Info: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS

6116 block diagram

Contextual Info: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C

sop28

Abstract: STK22C48 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC
Contextual Info: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

ML0004

Abstract: SIMTEK STK22C48 sop28 SOP28 330 MIL STK22C48 STK22C48-NF25 STK22C48-NF45 Simtek obsolete part 32x512 STK22C48SF25
Contextual Info: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

Contextual Info: HOLTEK HT6116-70 CMOS 2Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consum ption - O perating: 400mW Typ. - Standby: 5|iW (Typ.) 70ns (M ax.) high speed access tim e Power down by pin C S T T L com patible in terface levels

UM61

Abstract: um6116 UM6116-2 umg1 umc um61 2kx8 EPROM 16KEPROM AFLC
Contextual Info: 2Kx8 CMOS SRAM Features q q n Single i-5 volt power supply Acccss limes 90/120 ns max. Currcn : Standard version 0perating: Standby: m Pin compatible with Standard 16K EPROM/Mask R O M n UMG1 16-2/-3 ” UM6116-2L/-3L 1 0 0 mA (max.) 5 0 /JA ( m a x . )

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8

m68400

Contextual Info: K M 6 8 4 0 0 0 A Fami l y CMOS SRAM Dacuro ent T\t\ 5 1 2Kx8 bit Low Power C M O S Static RAM History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Preliminary 0.2 Revise -Changed Operating current Icc2; 80mA 90mA June 5th 1995

Contextual Info: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02

HT6116 -7LL

Abstract: HTG116-70 HT6116 HT6116-70
Contextual Info: H T 6 1 1 6 -7 0 H O L T E K 2 5 S ' 3 > ' ^ > c : 5P \ 2 K - 8 B it S R A M Features Power dawn by pin CS TTL compatible Interface ievels Pin compatible wlth standard 2Kx8 bits of EPROM/MASK ROM Three’State output pins _ • Single 5V power supply * Low standby and operating power

es 3880 fm

Abstract: BBS 8500 manufacturer code rohm AS7C34096 AS7C4096 t9140
Contextual Info: H ig h P e rf o rm a n ce AS7C 4096 A S7 C 34 09 6 5 1 2Kx8 CMOS SRAM A 5 l 2 K x 8 CMOS SRAM Preliminary information Features • Organization: 524,288 w ords x 8 bits • High speed - 1 2 /1 5 /2 0 /2 5 ns address access time - 6 / 7 / 8 / 9 ns output enable access time

T6116

Abstract: HT6116-7LL
Contextual Info: HOLTEK n r ^ HT6116-7LL CMOS 2Kx8-Bit SRAM Features • • • • • • • • • S ingle 5V pow er supply Low pow er consum ption - O peratin g : 180m W Typ. - S tandby: 5|iW (Typ.) 70ns (M ax.) h ig h speed access tim e P ow er dow n by p in CS M em ory ex p an sio n by p in OE

Contextual Info: T T M/HITE /M IC R O E L E C T R O N IC S WS128K32-XXX 128Kx32 SRAM MODULE O rganized as 128Kx32; U ser C o n fig u ra b le as 2 56K x16 or 5 1 2Kx8 FEATURES C o m m e rcia l, In d u s tria l and M ilita r y T e m p e ra tu re R anges 5 V o lt P o w e r S u p ply

Contextual Info: 77 WS128K32-25G2SMX M/HITE /MICROELECTRONICS 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A c c ess T im e of 25ns O rg an ize d as 12 8 K x3 2 ; U se r C o n fig u ra b le as 2 5 6 K x 1 6 or ■ 5 1 2Kx8 R a d ia tio n T o le ra n t • T o t a l Dose H ard ness th ro u g h 1 x1 0 6 rad S i02

7142LA25L48B

Abstract: 7164L20 4Kx8 sram ttl 5962-8861011UA 7206l20l 5962-8855206YA 5962-8855206 5962-8953604 54FCT244AT 5962-8855206XA
Contextual Info: IDT Military Offerings FIFO Military Offerings Logic Military Offerings Multi-Port Military Offerings SRAM Military Offerings May 2005 FIFO Military Offerings FIFO Military Selector Guide by Part Number FIFO Military Selector Guide (by SMD Number) Obsolete Part List and Replacement Guide

1202z

Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Contextual Info: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883

48Z08

Abstract: X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68
Contextual Info: The Simtek nvSRAM The nvSRAM is a fast access nonvolatile random access memory based on a memory cell that combines SRAM and EEPROM elements. Simtek’s innovation with this unique memory cell allows for the production of the fastest, most dense, most reliable and most versatile monolithic

nv SRAM cross reference

Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
Contextual Info: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385

IDT54FCT541ATDB

Abstract: 5962-8861011UA 54FCT543DB 5962-8986301 54FCT162245TEB 54FCT543AT 54FCT541CTDB 5962-8860802 IDT54FCT162245ATEB 5962-8855201XA
Contextual Info: FIFO MILITARY SELECTOR GUIDE As Of: November 1, 2001 FIFO Military Offerings Page FIFO Military Selector Guide by Part Number . 3-4 FIFO Military Selector Guide (by SMD Number) . 5 Obsolete Part List and Replacement Guide . 6-8

MB98A91132-20

Contextual Info: Memory Cards 5 • Memory Cards (68-Pin, Two-Piece Connector Type) Vcc=+5V±5%,TA=0 °C to +55 °C Organization (W x b) Type Access Time max. (ns) Part Number Common Memory Cycle Time min. (ns) Attribute Memory Power Consumption max. (mW) Operating Standby Motte

Z80A

Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and