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    2L MARKING DIODE Search Results

    2L MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    2L MARKING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS


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    LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape PDF

    VBUS051BD-HD1

    Abstract: LLP1006-2L VBUS051BD esdprotection
    Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package


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    VBUS051BD-HD1 LLP1006-2L 18-Jul-08 VBUS051BD-HD1 VBUS051BD esdprotection PDF

    VISHAY diode MARKING EG

    Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package


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    VBUS051BD-HD1 LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 VISHAY diode MARKING EG PDF

    VCUT07B1-HD1

    Abstract: VCUT07B1
    Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code


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    VCUT07B1-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VCUT07B1-HD1 VCUT07B1 PDF

    Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code


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    VCUT07B1-HD1 LLP1006-2L LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)


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    VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: VCUT0505B-HD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code Y = type code (see table below)


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    VCUT0505B-HD1 LLP1006-2L LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 PDF

    Contextual Info: BAT54HT1G Schottky Barrier Diodes Connection Diagram 1 1 A2 2 SOD-323 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


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    BAT54HT1G OD-323 OD-323 PDF

    Contextual Info: Union Semiconductor, Inc. UESD6V8L1F http://www.union-ic.com Single Line Low Capacitance ESD Protection Diode In Ultra Small FBP 1.0h0.6 2L / SOD882 / DFN 1.0h0.6 2L Package Description The UESD6V8L1F ESD protection diode is designed to replace multilayer varistors MLVs in portable applications


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    OD882 PDF

    2L smd transistor

    Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
    Contextual Info: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)


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    MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l PDF

    zener diode 4,7 V code color

    Abstract: BZT52-C6V8FN2 zener diodes color coded 2L marking diode marking zk
    Contextual Info: BZT52-C6V8FN2 SURFACE MOUNT ZENER DIODE Unit : inch mm DFN 2L FEATURES • Ultra-Small Leadless Surface Mount Package • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives 5 4 MECHANICAL DATA 2 7 Case: DFN 2L, Plastic


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    BZT52-C6V8FN2 2002/95/EC MIL-STD-750, zener diode 4,7 V code color BZT52-C6V8FN2 zener diodes color coded 2L marking diode marking zk PDF

    15KV

    Abstract: PJSD05
    Contextual Info: PJSD05FN2 SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE 200 Watts POWER 5 Volts Unit : inch mm DFN 2L FEATURES • 200 Watts peak pules power( tp=8/20 s) • Small package for use in portable electronics • IEC61000-4-2 8KV contact 15KV Air compliant


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    PJSD05FN2 IEC61000-4-2 2002/95/EC MIL-STD-750, 15KV PJSD05 PDF

    PP15A

    Abstract: marking BU
    Contextual Info: PJSD05ULFN2 SINGLE LINE LOW CAPACITANCE TVS DIODE FOR ESD PROTECTION IN PORT ABLE ELECTRONICS VOLTAGE 200 Watts POWER 5 Volts Unit : inch mm DFN 2L FEATURES • 200 Watts peak pules power( tp=8/20 s) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications


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    PJSD05ULFN2 2002/95/EC MIL-STD-750 PP15A marking BU PDF

    PJSD05LCFN2

    Abstract: PJSD05
    Contextual Info: PJSD05LCFN2 BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium.


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    PJSD05LCFN2 8/20s 2002/95/EC MIL-STD-750, PJSD05LCFN2 PJSD05 PDF

    Contextual Info: MMBD4148FN2 SURFACE MOUNT SWITCHING DIODES VOLTAGE POWER 100 Volts 200mWatts Unit : inch mm DFN 2L FEATURES Fast switching Speed. Electrically ldentical to Standerd JEDEC Surface Mount Package ldeally Suited for Automatic lnsertion. In compliance with EU RoHS 2002/95/EC directives


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    MMBD4148FN2 2002/95/EC 200mWatts MIL-STD-750 PDF

    Contextual Info: PJSD05ULFN2 SINGLE LINE LOW CAPACITANCE TVS DIODE FOR ESD PROTECTION IN 3257$%/ ELECTRONICS VOLTAGE 200 Watts POWER 5 Volts DFN 2L Unit:inch(mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.021(0.55) • 200 Watts peak pules power( tp=8/20 s) • Small package for use in portable electronics


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    PJSD05ULFN2 PDF

    marking 78w

    Contextual Info: TYPE PRODUCTS TO-220AC 2L PAGE SCS112AG 1.TYPE SCS112AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK


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    O-220AC SCS112AG SCS112AG 125oC, 150oC 55150oC marking 78w PDF

    Contextual Info: 1SS387FN2 SURFACE MOUNT SWITCHING DIODES VOLTAGE 200mWatts POWER 80 Volts Unit : inch mm DFN 2L FEATURES Fast switching Speed. Electrically ldentical to Standerd JEDEC Surface Mount Package ldeally Suited for Automatic lnsertion. In compliance with EU RoHS 2002/95/EC directives


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    1SS387FN2 200mWatts 2002/95/EC MIL-STD-750 PDF

    Contextual Info: PJSD05LFN2 ESD PROTECTION DIODES Unit : inch mm DFN 2L FEATURES • IEC61000-4-2 Level 4 ESD Protection • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: DFN 2L, Plastic 5 4 Terminals: Solderable per MIL-STD-750, Method 2026 2 7 Polarity : Color band cathode


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    PJSD05LFN2 IEC61000-4-2 2002/95/EC MIL-STD-750, PDF

    scs106

    Contextual Info: TYPE PRODUCTS TO-220AC 2L PAGE SCS106AG 1.TYPE SCS106AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK


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    O-220AC SCS106AG SCS106AG 125oC, 150oC 55150oC scs106 PDF

    "MARKING CODE BD*"

    Contextual Info: MMBD4148FN2 SURFACE MOUNT SWITCHING DIODES VOLTAGE POWER 100 Volts 200mWatts Unit : inch mm DFN 2L FEATURES Fast switching Speed. Electrically ldentical to Standerd JEDEC Surface Mount Package ldeally Suited for Automatic lnsertion. In compliance with EU RoHS 2002/95/EC directives


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    MMBD4148FN2 200mWatts 2002/95/EC MIL-STD-750 48FN2 "MARKING CODE BD*" PDF

    marking code br

    Abstract: IEC61000-4-4
    Contextual Info: PJSD05MLFN2 ESD PROTECTION DIODES The PJSD05MLFN2 is designed to protect voltage sensitive components from ESD. Excellent clamping capability,low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. VOLTAGE POWER


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    PJSD05MLFN2 PJSD05MLFN2 2002/95/EC IEC61000-4-2 IEC61000-4-4 5/50ns) MIL-STD-750, 2010-REV marking code br PDF

    Contextual Info: TYPE PRODUCTS TO-220AC 2L PAGE SCS108AG 1.TYPE SCS108AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK


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    O-220AC SCS108AG SCS108AG 125oC, 150oC 55150oC PDF

    SCS110AG

    Abstract: scs110
    Contextual Info: TYPE PRODUCTS TO-220AC 2L PAGE SCS110AG 1.TYPE SCS110AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK


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    O-220AC SCS110AG SCS110AG 125oC, 150oC 55150oC scs110 PDF