2M MARKING Search Results

PAL16R8A

Abstract: PAL16L8A PAL16R4A-2
Contextual Info: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds

PAL16L8A

Abstract: 81036112A PAL16R8A PAL16R4A-2
Contextual Info: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds

pal16l8a

Abstract: PAL16R6A PAL16L8AMJ/883B PAL16R8A PAL16R4A-2
Contextual Info: OBSOLETE - No Longer Available PAL16L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS SRPS016 – D2705, FEBRUARY 1984 – REVISED MARCH 1992 • • • PAL16L8’ J OR W PACKAGE Choice of Operating Speeds

Contextual Info: Central" CS223-2M CS223-2N Semiconductor Corp. 2.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER

CS223-2M

Abstract: CS223-2N
Contextual Info: Central CS223-2M CS223-2N TM Semiconductor Corp. 2.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-4E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-70/-90/-12 • DESCRIPTION The MBM29F017A is a 16M-bit, 5.0 V-Only Flash memory organized as 2M bytes of 8 bits each. The 2M bytes of data is divided into 32 sectors of 64K bytes for flexible erase capability. The 8 bit of data will appear on DQ7 to

E6C3-AG5C-c

Contextual Info: E6C3-AG5C-C 720P/R 2M | OMRON Industrial Automation Global Home Our Strengths Products Technical Support Sitemap Global Network About Us Contact What's New Home > Products > Sensors > Rotary Encoders > Absolute > E6C3-A > E6C3-AG5C-C 720P/R 2M Sensors Rotary Encoders

Contextual Info: Central" CS92-2M CS92-2N* Semiconductor Corp. SILICON CONTROLLED RECTIFIER 2.0 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS92-2M and CS92-2N are epoxy molded Silicon Controlled Rectifiers designed for sensing circuit applications and control systems.

Contextual Info: VCUT05B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 5.5 V

Contextual Info: VCUT05B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 5.5 V

"Silicon Controlled Rectifier"

Abstract: 100 amp silicon controlled rectifier Marking A2s CS92-2M CS92-2N
Contextual Info: Central CS92-2M CS92-2N* TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 2.0 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS92-2M and CS92-2N are epoxy molded Silicon Controlled Rectifiers designed for sensing circuit applications and control systems.

LLP1006-2M

Abstract: VBUS05L1-DD1-G-08
Contextual Info: VBUS05L1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Low Cap. Single Line ESD-Protection Diode in LLP1006-2M Features • • • • • • • Very low load capacitance CD = 0.3 pF Ultra compact LLP1006-2M package Low package height < 0.4 mm

LLP1006-2M

Abstract: vcut05b1-dd1
Contextual Info: VCUT05B1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M Features • • • • • • • Ultra compact LLP1006-2M package Low package height < 0.4 mm 1-line ESD-protection Working range ± 5.5 V

Contextual Info: VCUT03B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 3.5 V

2M20A

Abstract: gk1k
Contextual Info: Central" CQ92-2M CQ92-2N* 2.0 Semiconductor Corp. TRIAC AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ92-2M and CQ92-2N are epoxy molded silicon Triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

Contextual Info: UG42S6428GSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 2M x 8 SDRAM with LVTTL, 2 banks & 2K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

5MHz-37

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The

LLP1006-2M

Abstract: marking 2M diode
Contextual Info: VBUS05L1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm 2 1 • 1-line ESD-protection • Working range ± 5.5 V

21789

Abstract: VCUT03B1-DD1-G-08 VCUT03B1 VCUT03B1-DD1 transistor 21789 LLP1006-2M
Contextual Info: VCUT03B1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M Features • • • • • • • Ultra compact LLP1006-2M package Low package height < 0.4 mm 1-line ESD-protection Working range ± 3.5 V

Contextual Info: VCUT05B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 5.5 V

Contextual Info: VCUT03B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm • 1-line ESD-protection 2 1 • Working range ± 3.5 V

LLP1006-2M

Abstract: LLP1006 esdprotection VBUS05L1-DD1 81188
Contextual Info: VBUS05L1-DD1 Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • Ultra compact LLP1006-2M package • Low package height < 0.4 mm 2 1 • 1-line ESD-protection • Working range ± 5.5 V

SOT89 MARKING CODE 43

Contextual Info: Central" CQ89-2M CQ89-2N Semiconductor Corp. 2.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-5E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The