2MX16 EEPROM Search Results

DP5Z2MW16PA3

Abstract: DP5Z2MW16PH3 DP5Z2MW16PI3 DP5Z2MW16PJ3 DP5Z2MW16PY3
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-22 A 32 Megabit FLASH EEPROM DP5Z2MW16Pn3 PRELIMINARY DESCRIPTION: SLCC Stack The DP5Z2MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

DP5Z2ME16PA3

Abstract: DP5Z2ME16PH3 DP5Z2ME16PI3 DP5Z2ME16PJ3 DP5Z2ME16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2ME16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

DP5Z2MK16PA3

Abstract: DP5Z2MK16PH3 DP5Z2MK16PI3 DP5Z2MK16PJ3 DP5Z2MK16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2MK16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MK16n3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

SLCC Series

Abstract: DP5Z2MX16PA3 DP5Z2MX16PH3 DP5Z2MX16PI3 DP5Z2MX16PJ3 DP5Z2MX16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 1 32 Megabit FLASH EEPROM DP5Z2MX16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

Contextual Info: 4Mx8/2Mx16/1Mx32, 90 - 120ns, PGA 30A126-22 D 32 Megabit FLASH EEPROM DPZ1MH32NV3 DESCRIPTION: The DPZ1MH32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers

Contextual Info: 4Mx8/2Mx16/1Mx8, 90 - 120ns, PGA 30A126-02 F 32 Megabit FLASH EEPROM DPZ1MX32NV3 DESCRIPTION: The DPZ1MX32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers 32

M25P08

Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Contextual Info: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010

Contextual Info: SM56404807UNWUU Preliminary Revision History • May 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • August 31, 1998 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM56404807UX6UU Preliminary B Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 29, 1998 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

DP5Z

Contextual Info: n INDEX GENERAL PRODUCT INFORMATION Dense-Pac Memory Module and Monolithic E merging T echnology / Products. Quality and R e lia b ilit y . Warranty . . 6 . 7 . 8 14 SRAM PRODUCTS

SST25VF128

Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Contextual Info: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash

Contextual Info: January 1997 Revision 2.0 DATASHEET SDC2UV6482 A -(67/84/100/125) T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: SM57204807UE6UU Preliminary B Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 29, 1998 Preliminary datasheet released. Note* :

JEP-106E

Contextual Info: July 1997 Revision 1.0 data sheet SDC3UV6482- 67/84/100/125 T-S 24MByte (3M x 64) CMOS Synchronous DRAM Module General Description The SDC3UV6482-(67/84/100/125)T-S is a high performance, 24-megabtye synchronous, dynamic RAM module organized as 3M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: SM564067574N6UP May 23, 2000 Revision History • May 23, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • January 6, 2000 Modified module length from 133.37mm to 133.35mm.

SM2M64SDTGREYE

Contextual Info: SM2M64SDTGREYE May 22, 2000 Revision History • May 22, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 13, 1998 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM56402807UX6UU Preliminary B Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 29, 1998 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM56402807UNWUU May 3, 2001 Revision History • May 3, 2001 Modified datasheet. • May 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • August 31, 1998

Contextual Info: cP FUJI October 1996 Revision 1.0 DATA SHEET - ' EDC4U V7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282-(60/70)(J/T)G -S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga­

Contextual Info: January 1997 Revision 3.0 D A T A S H E E T - SDC2UV7282 A -(67/84/100/125)T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized

2MX16

Contextual Info: October 1996 Revision 1.0 DATA SHEET EDC4UV7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized

Contextual Info: SM56403707UN6BU May 22, 2000 Revision History • May 22, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • November 25, 1998 Changed datasheet part no. from SM56403707UN6UU to SM56403707UN6BU.

Contextual Info: January 1997 Revision 2.0 D A TA SH EET - SOB2UV6482- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SOB2llV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as