2N 3904 IC Search Results

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

3906

Abstract: transistor 3906 3905 TRANSISTOR 2N 3906 NPN transistor 2n 3906 2N 3904 transistor 3906 TRANSISTOR npn transistor 2N 3904 transistor pnp 3906 pnp transistor 2n 3906
Contextual Info: HN/ 2N 3905/3906 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors HN / 2N3903 and HN / 2N 3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92

Contextual Info: SEM ICONDUCTOR ¡m 2N4123 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N 3904 for characteristics. AbSOlUtG Maximum RâtinÇjS

2N3904

Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

3904

Abstract: transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ceo = 4 0 V • Collector Dissipation: Pc m ax =625m W TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

TRANSISTOR 2N 3904

Abstract: 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1 Characteristic Symbol C ollector-Base Vbltage C ollector-Em itter Voltage

Contextual Info: S E M IC O N D U C T O R 2N3903 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N 3904 for characteristics. AbSOlUtG Maximum RâtlnÇjS

Contextual Info: am mam C h attw o rth, CA M m ic n o s e m i Progress PowcrcO by fochnolaqy 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 2N 3904 Features Through Hole Package Capable of 600mWatt:5 of Power Dissipation NPN General Purpose Amplifier

2N3904

Abstract: d44h8 NDT453N IC6100 LM3621 Li-ion battery
Contextual Info: 1A C h a rg e C u r r e n t Q1 D 44H 8 — Vf O - • IC1 L M 2 9 3 1 Z 5 .0 + 1 c ell Li - IC2 L M 3 6 21 VDD VBAT + C h g ln t VBAT VSS Ico m p LED 1 MCO LED2 V co m p 0 .1 JJ.F PFD Boost CSR V se t Ise t m C4 i . 0 .0 1 f i F C7 22 Q2 2N 3904 C5 11 0 . 0 2 2 ¡xY

t1d6

Abstract: PN3906 t1d6 transistor RXT3904 SST3904 UMT3904 SPEC-C37 r1a transistor 2N3904 MMST3904
Contextual Info: Transistors I NPN General Purpose Transistor UM T3904/SST3904/M M S T3904/R XT3904/2N 3904 • F e a tu re s • E x te r n a l d im e n s io n s U n its : m m 1 ) B V ceo < 4 0 V (lc = 1 m A > 2 ) C o m p le m e n ts th e U M T 3 9 0 6 /S S T 3 9 0 6 /M M S T 3 9 0 6 /R X T 3 9 0 6 /P N 3906.

2N3904

Abstract: 2N3903 2n3904D 2n3904 motorola 2N3904 equivalent MOTOROLA 2N 2N 3904 2n 3904 ic 3904
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3903 2N3904* NPN Silicon ‘Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Sym bol Value Unit Collector- Emitter Voltage Rating VCEO 40 Vdc Collector- Base Voltage VCBO 60

Contextual Info: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

marking CODE r1a

Abstract: 2N3904 transistor R1A R1A Marking npn SST3904 UMT3904 h 2n3904 Rohm umt3904 ic MARKING FZ MARKING 1F
Contextual Info: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 ! Features ! External dim ensions Units : mm 1 ) B V ceo > 40V (Ic = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. ! Package, marking and packaging specifications

transistor 2N 3904

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most

2n4125 equivalent

Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

smd ic hhb

Abstract: Quad 2n3904 smd 2N3904 TRANSISTOR SMD 312 2N3904 HHB smd smd transistor A1 HB smd transistor 517 smd transistor fay ic chip hhb 551C4
Contextual Info: SflE D • 312^557 EN2016 éiantec □ □ □ 5 S E1Ö TTT ■ ELA EN2016 Fast Quad NPN Array ELANTEC '•M3-ZS INC Features General Description • • • • • T he E N 2016 fam ily are quad m on olith ic vertical N P N transis­ tor arrays w hich offer excellen t param etric m atch in g and h igh

transistor 2N3905

Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
Contextual Info: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0

2N3904

Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903
Contextual Info: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage

f2n3906

Abstract: ZTX304 BC557P ZTX107 ZTX452 ZTX550 BC182P BC546P BCY65EP BFS61
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - N P N S IL IC O N P L A N A R G E N E R A L PURPO SE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

BC 540 TRANSISTOR

Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/

2n4125 equivalent

Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

NPN switching transistor 2N4403

Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24

2N3906 JEDEC

Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150