2N P CHANNEL Search Results

sd 4093

Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
Contextual Info: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A

HF 4093 N

Abstract: bf 4393 4392 2N4119
Contextual Info: N CHANNEL FIELD EFFECT TRANSISTORS - METAL CASE Typ«« 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 A p p lic a tio n AF/R F general purpose Usage g é n é ra i BF/H F 2N 4117 2 N 4 1 17 A 2 N 4118 V BR GSS m in •g s s m ax IV ) ip A r (n A ) -5 0 -5 0 -5 0

2N5460

Abstract: 2N5481 2N5461 2N5463 2N5465 2n5462 equivalent 2N5462 2N5464 equivalent CONFIGURATION 2N5461 2N5464
Contextual Info: DlfÜÜHIDU 2 N 5 4 6 0 -2 N 5 4 6 5 P-Channel JFET PIN CONFIGURATION TO-92 S D G CHIP TOPOGRAPHY , .0035 v .0035 ’ .0025 * .0025 5503B MAXIMUM RATINGS 2N 5460 R A T IN G SYMBOL 2N 5463 2N 5464 2N 5461 2N 5462 U N IT S 2N 5465 Drain-Gate Voltage VdG 40 60

2N5196

Abstract: u421s
Contextual Info: 2N5196 SERIES N-Channel JFET Pairs The 2N 5196 S e rie s of m onolithic J F E T p airs C T S iic o n ix in c o r p o ra te d is >G M AX V 9 ft M IN (m S ) (P A ) |Vg S 1"V GS2| M AX <mV) 2N 5196 -50 1 -1 5 5 2N 5197 -5 0 1 -1 5 5 2N 5198 -5 0 1 -1 5 10 2N 5199

2N2608

Abstract: 2N3329-32 2N3909 2N2843 2N2608CHP 2N2608JAN 2N2843CHP 2N3909CHP 2N284 p-channel jfet
Contextual Info: U & p-channel JFET B designed f o r . . . S ilic o n ix General Purpose Amplifiers and Attenuators TYPE PACKAGE P R IN C IP A L D E V IC E S Single Single Single TO-18 TO-72 Chip 2N 2608, 2N 2608JA N , 2N2843 2N3329-32, 2N3909, V C R 5 P 2N 2608C H P, 2 N2843CH P,

SST5461

Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

SST5461

Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462 70262
Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

SST5461

Abstract: "P-Channel JFETs" 2N5460 2n5462 2N5461 SST5460 SST5462 2n EQUIVALENT
Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

2N5460

Abstract: 2N5461 2N5462 SST5460 SST5461 SST5462
Contextual Info: 2N/SST5460 Series P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9 –2 40 2 –4

SST5461

Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462
Contextual Info: 2N/SST5460 Series P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9 –2 40 2 –4

P-Channel JFETs

Abstract: marking 2n sot23 52431 2N/SST5461 SST5461
Contextual Info: Tem ic 2N/SST5460 Series S e m i c o n d u c t o r s P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary P a rt N um ber VcS oB <V) V<BR)GSS M in (V ) gfe M in (m S ) l o s s M in (m A ) 2N/SST5460 0.75 to 6 40 1 -1 2N/SST5461 1 to 7.5

Contextual Info: 2N5114J AN/J ANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N 5114 J AN/J ANTX/JANTXV 2N 5115J AN/J ANTX/JANTXV 2N 5116 J AN/JANTX/J ANTXV PRODUCT SUMMARY Part Number VGS off (V) r D S(on) Max (£2) Id (off) TVp (pA) toN Max (ns) 2N5114 5 to 10 75 -1 0

P2N50

Abstract: tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N50 M T P 2N 45 M T P 2N 50 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 2 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high

2N5460

Contextual Info: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JF E T A m p lifie rs 2N 5460 th ru 2N 5462 P-Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit VdG 40 Vdc V g SR 40 Vdc 'G f 10 mAdc Total Device Dissipation @ T /\ = 25°C

MEM563C

Abstract: MEM551 mem 551c diode 30 YF 2N4067 2N3609 MEM955 955A 550C 562C
Contextual Info: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M

2N6782

Abstract: 2N6781 lei-7
Contextual Info: JA WO S 1988 SEMELAB LTD 3 7E ]> • 0133107 DDDG2ci ci 0 SEMELAB 2N 6781 2N 6782 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te

PW 2N

Abstract: marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY P a rt N u m b e r V û S o ff ( V ) r D S (o n) M a x ( Q ) ItH o ff) T Y P ( P A ) 2N/PN/SST4391 - 4 to -1 0 30 5 4

Contextual Info: T-39-09 Ja m n r iosa 37E SEMELAB LTD D • 0133107 D00D31S SEMELAB 2N 6797 2N 6798 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te

2N6796

Abstract: 2N6795 2N6195 2N679B 2N6196 LE17 diode 60V 8A
Contextual Info: 37E » SEMELAB LTD I 0133107 □□□□313 1 T-39-09 JAN 0 5 1988 SEM ELAB 2N 6795 2N 6796 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te

2n4338

Contextual Info: Tem ic 2N4338/4339/4340/4341 Semiconductors N-Channel JFETs Product Summary P art N u m b er V G S off ( V ) g fs M i n ( m S ) l o s s M a x (m A ) 2N 4338 -0 .3 t o - 1 -5 0 0 .6 0 .6 2N 4339 - 0 .6 to - 1 .8 -5 0 0.8 1.5 2N 4340 "1 t o - 3 -5 0 1.3 3.6

p2n60

Abstract: ATE 2N60 TP2N60 IC D 2N60 2n55 mtp2n55 S550A 2n60 MOSFEt
Contextual Info: MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA M T P 2N 55 M T P 2N 60 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-M ode S ilico n G ate TM O S T M O S P O W ER FETs 2 AM PERES These TM O S P ow er FETs are designed fo r high voltag e , high

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

ic 2n35

Abstract: 2N35 P2N35 mtp2n35 mtp2n40 P2N40
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 2N 35 M T P 2N 40 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S Pow er FETs are designed fo r high voltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regulators,

2N2844

Abstract: 2N2609JAN 2N2609 2N2609CHP 2N2844CHP
Contextual Info: p-channel JFET B designed f o r . . . • ■o o S ilic o n ix General Purpose Amplifiers TYPE PACK AG E P R IN C IP A L D E V IC E S Single Single TO -18 Chip 2 N 2609C H P , 2N 2844C H P 2 N 2 6 0 9 , 2N 2609JA N , 2 N 2844 P E R F O R M A N C E C U R V E S 25°C unless otherwise noted