Untitled
Abstract: No abstract text available
Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
Q67042-S4030
2N03L10
BSPD30N03S2L-10,
SPD30N03S2L-10
|
2N03L10
Abstract: marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10
Text: IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 10 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11
|
Original
|
PDF
|
IPD30N03S2L-10
PG-TO252-3-11
2N03L10
2N03L10
marking g54
PG-TO252-3-11
ANPS071E
IPD30N03S2L-10
|
2N03L10
Abstract: ANPS071E SPD30N03S2L-10
Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P- TO252 -3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
Q67042-S4030
2N03L10
BSPD30N03S2L-10,
SPD30N03S2L-10
2N03L10
ANPS071E
|
2N03L10
Abstract: 2N03L
Text: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P- TO251 -3-1 Superior thermal resistance
|
Original
|
PDF
|
SPU30N03S2L-10
SPU30N03S2L-10
Q67042-S4042
2N03L10
BSPU30N03S2L-10,
2N03L10
2N03L
|
2n03l10
Abstract: SPB73N03S2L-10 SPP73N03S2L-10
Text: SPP73N03S2L-10 SPB73N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 8 mΩ ID 73 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) P-TO220-3-1 •=Superior thermal resistance
|
Original
|
PDF
|
SPP73N03S2L-10
SPB73N03S2L-10
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4037
2N03L10
P-TO263-3-2
2n03l10
SPB73N03S2L-10
SPP73N03S2L-10
|
2N03L10
Abstract: P-TO252 SPD30N03S2L-10
Text: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
P-TO252
Q67042-S4030
2N03L10
BSPD30N03S2L-10,
SPD30N03S2L-10
2N03L10
P-TO252
|
2N03L10
Abstract: TO252 thermal character TO252 rthjc ANPS071E SPD30N03S2L-10
Text: SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A • Low On-Resistance R DS(on) PG-TO252-3 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
PG-TO252-3
SPD30N03S2L-10G
2N03L10
SPD30N03S2L-10
2N03L10
TO252 thermal character
TO252 rthjc
ANPS071E
|
2N03L10
Abstract: No abstract text available
Text: SPD30N03S2L-10 G Opt iMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
PG-TO252-3
SPD30N03S2L-10G
2N03L10
SPD30N03S2L-10
2N03L10
|
Untitled
Abstract: No abstract text available
Text: SPD30N03S2L-10 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 RDS on • Logic Level ID • Low on-resistance RDS(on) V 10.4 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P-TO252 •=Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
P-TO252
Q67042-S4030
2N03L10
|
2N03L10
Abstract: 2N03L
Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 10 mΩ •Logic Level ID 30 A •N-Channel •Low On-Resistance RDS(on) P- TO252 -3-11 •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
SPD30N03S2L-10
Q67042-S4030
2N03L10
BSPD30N03S2L-10,
2N03L10
2N03L
|
2n03l10
Abstract: 2N03L
Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) P-TO252-3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
P-TO252-3-11
SPD30N03S2L-10
P-TO252-3-11
Q67042-S4030
2N03L10
30N03S2L-10
2n03l10
2N03L
|
2N03L
Abstract: 2N03L10 SPU30N03S2L-10
Text: SPU30N03S2L-10 Preliminary data OptiMOS Power-Transistor Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P-TO251 Superior thermal resistance 175°C operating temperature
|
Original
|
PDF
|
SPU30N03S2L-10
P-TO251
Q67042-S4042
2N03L10
BSPU30N03S2L-10,
SPU30N03S2L-10
2N03L
2N03L10
|
2N03L10
Abstract: SPU30N03S2L-10
Text: SPU30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P-TO251 Superior thermal resistance 175°C operating temperature
|
Original
|
PDF
|
SPU30N03S2L-10
P-TO251
Q67042-S4042
2N03L10
BSPU30N03S2L-10,
SPU30N03S2L-10
2N03L10
|
2N03
Abstract: No abstract text available
Text: SPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 10 mΩ ID 30 A • Logic Level • Low On-Resistance R DS(on) PG-TO252-3-11 • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance
|
Original
|
PDF
|
SPD30N03S2L-10
PG-TO252-3-11
SPD30N03S2L-10
PG-TO252-3-11
Q67042-S4030
2N03L10
BSPD30N03S2L-10,
2N03
|