| 2N2219J |
|
Semico
|
Package = TO-39, Level = Jans, Vceo (V) = 30, Vcbo (V) = 60, Vebo (V) = 5.0, Ic (A) = 0.80, Power (W) ta = 0.8, Rtja (C/W) =, Tstg/top (C) = -55 to +200, Hfe = 300, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
199.18KB |
2 |
| 2N2219JAN |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
58.42KB |
2 |
| 2N2219JANS |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
58.42KB |
2 |
| 2N2219JANTX |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
58.42KB |
2 |
| 2N2219JANTXV |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
58.42KB |
2 |
| 2N2219JS |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 30 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
199.18KB |
2 |
| 2N2219JV |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 30 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
199.18KB |
2 |
| 2N2219JX |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 30 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
199.18KB |
2 |
