2N2615 Search Results

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

2N2598

Abstract: 2N2599 2K25 2N4260 N2591 2N2603 2n5179 2N915 2N2459 2N2460
Contextual Info: 8134693 SEMICOA Type NPN PNP 2N260JL 2N2521 2N2602 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 ~2N2595 2N2596 2N2516 2K2597 2N2518 2N2598 2N2599 2N2519 : 2N260Ó 2N2599R 2N2600A ' Type NPN 40 400 400 400 400 400 400 400 400

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2N2461

Abstract: 2n246a 2N2603 2N4260 2N5032 2n5179 2N915 2N92 2N2462 2N2515
Contextual Info: LOW LEVEL AMPLIFIERS Cont’d Type NPN PNP 2N260JL _2N2521 2N2602 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 2N2595 •2N2596 2N2516 2N2597_ 2N2518 2N2598 2N2599 2N2519 2N260Ö 2N2599A 2N2600A ' Type NPN 5 Maximum Ratings

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

2N2648

Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor 2N3563

Abstract: 2N3563 2N3564 2n3600 2N915 KM9018 MPS3563 MPS3693 MPS3694 MPS3826
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS HFE VCE sat n IC (mA) VCE (V) max (V) IC (mA) min (MHz) Cob Cre* max (PF) 198 # 200 160 400 1 3 8 10 10 5 1 10 10 10 0.5 0.4 10 10 - - . . - 400 600 600 200 200 1.7 1.7 1.7 3.5 3.5 40 100 25 25 20 160 400 -

ESM2369

Abstract: 2N3605A MPS4275 2n3564 2N4418 2SC321H tis49 2N3606 BSY19 BSX88
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

Contextual Info: 813 469 3 SE MICOA MO DE J 0 1 3 4 ^ 3 □□ □D1 3D S |~ T-2*?-O \ LOW LEVEL AMPLIFIERS C o n t’d Maximum Ratings Type NPN PNP 2N260JL 2N2521 2N2602 ' 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 2N2595 • 2N2596 2N2516

Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN Electrical C haracteristics M axim um R atings Type No. VCBO (V) Min VCEO (V) Min VEBO (V) Min 'cBO (PA) VCB (V) Ma hFE 20 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0 1.20 50 15 40 10.0