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    2N2857 DIE Search Results

    2N2857 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation
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    2N2857 DIE Price and Stock

    Motorola Semiconductor Products 2N2857-DIE

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N2857-DIE 278
    • 1 $2.94
    • 10 $2.94
    • 100 $1.1025
    • 1000 $1.029
    • 10000 $1.029
    		Buy Now

    2N2857 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2857 semicoa

    Abstract: 2N2857 2C2857 2N2857UB SD2857 SD2857F SQ2857 SQ2857F 2N2857 DIE chip type geometry Semicoa
    Text: Data Sheet No. 2C2857 Generic Packaged Part: Chip Type 2C2857 Geometry 0011 Polarity NPN 2N2857 Chip type 2C2857 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N2857, 2N2857UB, SD2857, SD2857F, SQ2857, SQ2857F Product Summary:


    Original     		PDF 2C2857 2N2857 2C2857 2N2857, 2N2857UB, SD2857, SD2857F, SQ2857, SQ2857F 2N2857 semicoa 2N2857 2N2857UB SD2857 SD2857F SQ2857 SQ2857F 2N2857 DIE chip type geometry Semicoa

    2N2857 semicoa

    Abstract: No abstract text available
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J


    Original     		PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) MIL-STD-750 MIL-PRF-19500/343 2N2857 semicoa

    2N2857 semicoa

    Abstract: 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J


    Original     		PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) MIL-STD-750 MIL-PRF-19500/343 2N2857 semicoa 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX

    Untitled

    Abstract: No abstract text available
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2857J • JANTX level (2N2857JX)


    Original     		PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) 2N2857JSR) 2N2857JSF) MIL-STD-750 MIL-PRF-19500/343

    PN3563 equivalent

    Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
    Text: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å


    Original     		PDF CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 22-March PN3563 equivalent 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317

    ny transistor

    Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90
    Text: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS


    Original     		PDF CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 ny transistor 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90

    JANKCA2N2857

    Abstract: 343H 2N2857 2N2857 RHA 2n2857 common base amplifier 608C 2N2857UB hewlet 2N2857 JANTXV 2N2857 JANS
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 July 2010. MIL-PRF-19500/343J 2 April 2010 SUPERSEDING MIL-PRF-19500/343H 20 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER,


    Original     		PDF MIL-PRF-19500/343J MIL-PRF-19500/343H 2N2857 2N2857UB, MIL-PRF-19500. JANKCA2N2857 343H 2N2857 RHA 2n2857 common base amplifier 608C 2N2857UB hewlet 2N2857 JANTXV 2N2857 JANS

    UHF UHF Transistors

    Abstract: 2N2857 2N3478 2N998 2n5179 2N2865 2N3839 2N917 2N917A 2N918
    Text: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB V (V) (V) µA) (µ MIN MIN MIN MAX hFE @ IC @ VCE (V) (mA) MIN (V) MAX VCE (SAT) @ IC (V) (mA) MAX fT Cob (MHz) *Ccb (pF) MIN MAX 2N917 RF/IF OSCILLATOR 30 15 3.0 0.001


    Original     		PDF 2N917 2N917A 2N918 2N998 2N2857 BFY90 360mW CEN741 CEN832 UHF UHF Transistors 2N2857 2N3478 2N998 2n5179 2N2865 2N3839 2N917 2N917A 2N918

    UHF UHF Transistors

    Abstract: 2N3839
    Text: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100


    Original     		PDF 2N917 2N917A 2N918 2N998 2N2857 2N2865 2N34780 UHF UHF Transistors 2N3839

    UHF UHF Transistors

    Abstract: 2n3478 2n918 low noise transistors vhf PNP UHF transistor UHF pnp transistor 2N917 2N2857 2n918 data sheet 2N918 DATASHEET
    Text: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100


    Original     		PDF 2N917A 2N918 2N998 2N2857 2N2865 2N3478 2N3839 2N5179 BFY90 2N917 UHF UHF Transistors 2n3478 2n918 low noise transistors vhf PNP UHF transistor UHF pnp transistor 2N917 2N2857 2n918 data sheet 2N918 DATASHEET

    2N2857

    Abstract: 2N2857UB JANKCA2N2857 JANHCA2N2857 MIL-PRF-19500/343F 608C
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 8 May 2002. MIL-PRF-19500/343F 8 February 2002 SUPERSEDING MIL-PRF-19500/343E 28 November 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/343F MIL-PRF-19500/343E 2N2857 2N2857UB 2N2857UB JANKCA2N2857 JANHCA2N2857 MIL-PRF-19500/343F 608C

    Device Test

    Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
    Text: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance


    Original     		PDF

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		PDF MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


    Original     		PDF A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866

    MMBR2857

    Abstract: MMBR2857L 2857L
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MMBR2857L The RF Line Die S ource S am e as 2N2857 N PN Silicon High Frequency Tran sistor . . . des ig n e d p rim a rily for use in h ig h -g ain , lo w -n o ise a m p lifie r, oscillator and m ix e r ap p licatio n s. P ackaged for thick or th in -film circuits using surface


    OCR Scan     		PDF MMBR2857L 2N2857 MMBR2857 MMBR2857L 2857L

    2N2857 DIE

    Abstract: 2N2857 MOTOROLA 2N3839 SILICON DICE motorola
    Text: MOTOROLA SC {DIODES/OPTO} 6367255 MOTOROLA 34 SC M T | L ,3 t ,7 5 S S DIODES/OPTO 34-C 0 0 3 f lC m 38049 |~" D T'3i-ir SILICON RF TR A N SISTO R DICE (continued) 2C2857 DIE NO. — NPN LINE SOURCE — RF502.153 This die provides performance equal to or better than that of


    OCR Scan     		PDF RF502 2C2857 2N2857 2N3839 15Vdc 2N2857 DIE 2N2857 MOTOROLA 2N3839 SILICON DICE motorola

    CEN741

    Abstract: CEN832 low noise transistors vhf 2n998 OSC20 BFY90
    Text: Small signal Transistors npn TO-72 Case TYPE NO. DESCRIPTION hFE v CBO VCEQ v EBO ICBO @ v CBO ftiA V) (V) (V) (V) @ ic @ vCE (mA) (V) VCE(SAT] @ lc Cob fT (mA) (MHZ) *Ccb (V) (PF) 2N917 2N917A RF/IF OSCILLATOR RF/IF OSCILLATOR MIN MIN MIN MAX 30 15 3.0


    OCR Scan     		PDF 2n917 2n917a 2n918 2n998 2n2857 2n2865 2n3478 2n3839 2n5179 bfy90 CEN741 CEN832 low noise transistors vhf OSC20

    amplifier CV 203

    Abstract: 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857
    Text: RA YTHEON/ SE MI CO NDUCT OR 75 97360 RAYTHEON» SEMICON DU CT OR hi ]>F| 75T73bD ODDSDfli 66C 05081 D T~- 3 l~ O Product Specifications Small Signal V NPN Raytheon Ultra High Frequency Oscillator and


    OCR Scan     		PDF 75T73bD 2N917 2N918/JAN 2N2608 2N2857 Fj7S173tO O-116) 14-Lead 100BSC 548SC amplifier CV 203 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857

    Untitled

    Abstract: No abstract text available
    Text: Small Signal npn Transistors TO-72 Case TYPE NO. DESCRIPTION v CBO v CEO V (V) VEBQ 'CBO « v CBO (V) & *) *»l : E ic ® v CE <B*A) (V) VCE(SAT] « l e (V) *T c ob <mA) (MHZ) *c cb (V) (pF) MIN MIN MIN MAX MIN MAX MAX MIN MAX 2N917 RF/IF OSCILLATOR 30


    OCR Scan     		PDF 2N917 2N917A 2N918 2N998 2N2857 2N2865 2N3478 2N3839 2N5179 BFY90

    rca+2n3478

    Abstract: 2n3478
    Text: Sm all signal Transistors n pn TO-72 Case TYPE NO. DESCRIPTION v CBO v CEO Ve b o >CBO VCBO V (V) (V) (HA) h|=E (V) @ ic @ v CE (mA) (V) h VCE(SAT @ >C Cob (mA) (MHZ) *c cb (V) <PF) MIN MIN MIN MAX 2N917 RF/IF OSCILLATOR 30 15 3.0 0.001 15 20 — 3.0


    OCR Scan     		PDF 2N917 2N917A 2N918 2N998 2N2857 2N2865 2N3478 2N3839 2N5179 BFY90 rca+2n3478

    Untitled

    Abstract: No abstract text available
    Text: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION hpE v CBO v CEO vEBO ICBO vCBO V 00 (V) OiA) MIN MIN MIN MAX 30 15 3.0 0.001 3.0 — 3.0 (V) @ic ® V CE (mA) (V) VCE(SAT] @IC fT C0b (V) (mA) (MHZ) *c cb MAX MIN MAX (pF) MIN MAX 15 20 .


    OCR Scan     		PDF 2N917 2N917A 2N918 2N998 2N2857 2N2865 2N3478 2N3839 2N5179 BFY90

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756