| 2N2905AL |
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Microsemi
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BJT, PNP, Switching Silicon Transistor, VCB0 60V, IC 0.6A - Pol=PNP / Pkg=TO5 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 |
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PDF
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57.56KB |
2 |
| 2N2905AL |
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Microsemi
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP |
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PDF
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7 |
| 2N2905AL |
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Semelab
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Bipolar PNP Device in a Hermetically Sealed TO5 Metal Package - Pol=PNP / Pkg=TO5 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 |
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PDF
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10.71KB |
1 |
| 2N2905AL |
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Semico
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Type 2N2905AL Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO5 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 |
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PDF
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43.8KB |
2 |
| 2N2905AL |
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Semico
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Chip: geometry 0600 polarity PNP - Pol=PNP / Pkg=TO5 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 |
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PDF
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29.77KB |
1 |
| 2N2905AL |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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36.33KB |
1 |
| 2N2905AL |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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36.33KB |
1 |
| 2N2905AL |
|
Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
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36.33KB |
1 |
| 2N2905ALJ |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 60 Vcbo (V) = 60 Vebo (V) = 5 Ic (A) = 0.60 (Power W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.40 |
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203.44KB |
2 |
| 2N2905ALJANS |
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New England Semiconductor
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PNP SWITCHING SILICON TRANSISTOR |
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PDF
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57.56KB |
2 |
| 2N2905ALJANTX |
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New England Semiconductor
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PNP SWITCHING SILICON TRANSISTOR |
Original |
PDF
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57.56KB |
2 |
| 2N2905ALJANTXV |
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New England Semiconductor
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PNP SWITCHING SILICON TRANSISTOR |
Original |
PDF
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57.56KB |
2 |
| 2N2905ALJS |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 60 Vcbo (V) = 60 Vebo (V) = 5 Ic (A) = 0.60 (Power W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.40 |
Original |
PDF
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203.44KB |
2 |
| 2N2905ALJX |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 60 Vcbo (V) = 60 Vebo (V) = 5 Ic (A) = 0.60 (Power W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.40 |
Original |
PDF
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203.44KB |
2 |
