2N2920L Search Results

2N2920

Abstract: 2N2929 2N2919
Contextual Info: TECHNICAL DATA 2N2919 JTX, JTXV 2N2919L JTX, JTXV 2N2920 JTX, JTXV 2N2920L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Symbol All Types Units Collector-Emitter Voltage 60 Vdc VCEO

Contextual Info: 2N2920L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

Contextual Info: 2N2920L+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

2N2920

Abstract: 2N2919 transistor 2N2919 JANS2N2920 2N2920U JANTXV 2N2920 2N2920L 2N2919L 2N2919L JANTXV 2N2919L JANTX
Contextual Info: TECHNICAL DATA NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/355 Devices 2N2919 2N2919L 2N2919U Qualified Level JAN JANTX JANTXV JANS 2N2920 2N2920L 2N2920U MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: 2N2920L+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

2n2920

Abstract: 2N2919 2N2920A 2N2929
Contextual Info: TECHNICAL DATA 2N2919 JAN, JTX, JTXV 2N2919L JAN, JTX, JTXV 2N2920 JAN, JTX, JTXV 2N2920L JAN, JTX, JTXV 2N2920U JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL UNITIZED DUAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage

Contextual Info: 2N2920L+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

2N2920U

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 12 June 2013. INCH-POUND MIL-PRF-19500/355R 12 March 2013 SUPERSEDING MIL-PRF-19500/355P 9 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,

2SK847

Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247

2N2920

Abstract: 2n2919 2N2920U lake transistor transistor 2N2919 2N2919U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

2N2920

Abstract: 355N 2N2920L 2N2920U 325 MMC pins 2N2920 2N2919 2N2919L JANHCB2N2919
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 5 May 2009. INCH-POUND MIL-PRF-19500/355N 5 February 2009 SUPERSEDING MIL-PRF-19500/355M 16 March 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,