2N303 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N3035

Abstract: TRANSISTOR 2N3035
Contextual Info: 2N3035 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS Ie 200 mA Vc b 50 V Pd i s s 1.0 W @ Te $ 25 0C Tj -65 to + 200 °C Ts t g -65 to + 200 0C

2N3033

Contextual Info: , One, J. C/ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18

JANTX 2N3028

Abstract: 2N3028 2N3027 2N3029 JAN 2N3029 2N3030 2N3031 2N3032
Contextual Info: JAN & JANTX 2N3027-2N3032 SCRs 0.5 Amp, Planar Ì1 -fi e*C<SIJÉANÛÛE F EA T U R E S • JA N and JA N T X Types Available • Fu lly Characterized for “Worst C ase " Design • Passivated Planar C onstruction for M axim um R e lia b ilit y a n d P a ra m e te r U n ifo rm it y

2N3555

Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
Contextual Info: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028

TE 555-1

Abstract: 419 on 80 GA201A 2n3031 2n2031
Contextual Info: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 2N3030 JANTX2N3027 2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 2N3031 JANTX2N3028

Contextual Info: M I C R O S E M I C O R P / ÜJATERTOÜJN SQE D G 0 1 E 5 2 b R24 • U N I T SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar T ^ j r - n FEA TU R ES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for “Worst Case” Design • Passivated Planar Construction for Maximum

MILS19500-419

Abstract: 2N3032 2N3027 aade
Contextual Info: I INCH-POUMD { M I L - S - 1 95 00 / 4 1 9 ER AMENONENT 2 29 J u n e i yÿü gUPPB g P B Tlig v-AMENDMENT 1 ~ ZI May 1969 MILITARY SPECIFICATION SEM IC ON DUC TO R DEVICE. THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3027 THROUGH 2N3032, AND 4 » n iv u w u n

Contextual Info: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar Ì1 - fi e*C<SIJÉANÛÛE FEATU RES DESCRIPTION • JAN and JANTX Types Available • Fully Characterized for “Worst Case" Design • Passivated Planar Construction for Maximum The 2N3027 series of planar SCRs controlled switches are intended for use in

2n3033

Contextual Info: m 2N3033 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is D esigned fo r A valanche-M ode V ery Fast Switching A pplications. MAXIMUM RATINGS 200 mA lc V 100 V ce P diss 1.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 175 °C /W

2N3035

Contextual Info: m 2N3035 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. MAXIMUM RATINGS lc 200 mA V cb 50 V P diss 1.0 W @ Tc = 25 °C Tj -65 to + 200 °C T stg -65 to + 200 °C 0JC 175 °C/W CHARACTERISTICS

2N3036

Contextual Info: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

Sfor1b42

Abstract: 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 2N3031 AA114 2N3028 MCR203 E0100FD E0102FA E0102FB E0102FD 10101 MMBS50S1 BRX45 BRX45 C203YY SlYY BRY55-S0 BRY55SS0

2n3037

Abstract: LT 752 2N2243 2N3039 2N3038
Contextual Info: TYPES 2N3037, 2N3038 N-P-N SILICON TRANSISTORS B U L L E T I N NO. D L - S 634251, A U G U S T 1963 F O R G E N E R A L P U R P O S E A M P L IF IE R A N D S W IT C H IN G A P P L IC A T IO N S • High Breakdown Voltage Com bined With Very Low Saturation Voltage

2N3033

Contextual Info: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C

EC103A

Abstract: To226AB MCR100-2 TAG 85 22 TECCOR EC103A SF1B12 226AB SN051 TO-226-AB BT149A
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 GB201 GB201A SN051 AA101 AA10S 2N3032 AA115 2N3029 MCR204 E0100AO 1;0102Aj\ E0102AB E0102AO P0102AA P0102AB 10102 MMBS50S2 X0102AA BT149A BT149A 2N66B1 2N1931 P0109AA P0109AB P0107AA

Contextual Info: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

2N3036

Contextual Info: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

2n3028

Abstract: 2N3028 JANTX
Contextual Info: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar FEA T U RE S • JA N and JA N T X Types Available • Fully Characterized for “Worst C ase” Design • Passivated Planar Construction for Maxim um R eliability and Parameter Uniform ity • Low On-State Voltage and Fast Sw itching

2n3035

Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si

2N3036

Contextual Info: 2N3036 Si NPN Lo-Pwr BJT 16.24 Transistors Transistors Bipolar Si N. 1 of 2 Home Part Number: 2N3036 Online Store 2N3036 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N3036

Abstract: LG 631 IC
Contextual Info: Datasheet 2N3036 ~ - - • NPN SILICON TRANSISTOR Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3036 is a Silicon NPN Epitaxial Planar Transistors mounted in a

2N3029

Abstract: JANTX 2N3028 2N3028 2N3027 2N3030 2N3031 2N3032 UNITRODE 3027
Contextual Info: JAN & JANTX 2N3027-2N3032 SCRs 0.5 Amp, Planar FEATURES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for "W orst Case" Design • Passivated Planar Construction for Maximum Reliability and Parameter Uniformity • Low On-State Voltage and Fast Switching

2n3036

Contextual Info: TYPE 2N3036 N-P-N SILICON TRANSISTOR B U L L E T IN NO . D L -S 734232, A U G U S T 1 9 6 3 - R E V IS E D M ARC H 1973 FOR G E N E R A L PURPOSE, M E D IU M -P O W E R A M P L IF IE R A N D SW IT C H IN G A P P L IC A T IO N S • High Power Dissipation Capability: 1 0 w a t T c = 25°C