2N347 Search Results

Contextual Info: 2N3476 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150# I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)9.0

westinghouse transistors

Abstract: westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470 2N3470-73 2N2226
Contextual Info: 13 O e : rn m x H 'ZL n ! ! i Page 1 S ilico n P ow er T ra n s is to rs U ltra-H igh G ain J E D E C T y p e s 2N2226-33 2N3470-77 Wesîinghouse -J IM vO O IM 10 Amperes, 150 Watts Collector-to-Emitter Voltage 50 to 200 Volts Ap p licatio n Therm al C h a ra cteristics

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

2N3478

Abstract: RF Power Transistors 2N3478 I2758 RCA-2N3478 C4706 i2757ri i2757 2n3478 rca k0028
Contextual Info: File No. 77 R F Power T ra n s is to rs Solid State Division 2N3478 SILICO N N-P-N EPITAXIAL PLANAR T R A N SIST O R For V H F /U H F A pp licatio ns in Industrial and Com m ercial Equipm ent Features: h ig h u n n e u tra liz e d pow er gain • h igh gain -b o n d w id th p roduct

KT808AM

Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4

Contextual Info: 2N3475 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150# I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)9.0

se5021

Abstract: se5020 2N3563 2N4134 2N4135 MPS6548 SE5023
Contextual Info: This NPN Transistors NATL RFAmplifiers and 0scillators By Case Style VCES* VcBO V Min Vceo (V) Min Vebo (V) Min 2N2857 TO-72 30 15 2.5 10 15 30 150 3 1 1 1000 1900 5 4.5 450 40 2N3478 TO-72 30 15 2 20 1 25 150 2 8 1 750 1600 5 4.5 200 40 40 ' CB0 VCB ("A ) @

2N3478

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3478 TO-72 VHF/UHF Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO 30 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage

2N3293

Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

Contextual Info: 2N3477 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150# I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)9.0

Contextual Info: 2N3478 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)1.0

2N3478

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N3478 TO-72 Boca Semiconductor Corp. BSC VHF/UHF Applications ABSOLUTE MAXIMUM RATINGS

2N3478

Abstract: rca+2n3478
Contextual Info: 2N3478 120V NPN silicon planar transistor 28.75 Transistors UHF/Mic. 1 of 1 Home Part Number: 2N3478 Online Store 2N3478 Diodes 1 2 0 V NPN s ilic o n planar t ransis t o r Transistors Enter code INTER3 at

2N3563

Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
Contextual Info: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)

KT808AM

Abstract: KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4

2N3294

Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

Contextual Info: 2N3473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150# I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)9.0

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20