| 2N3506A |
|
Defense Supply Center Columbus
|
NPN Silicon Switching Transistor |
Original |
PDF
|
100.41KB |
14 |
| 2N3506A |
|
Microsemi
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN POWER SILICON TRANSISTORS |
Original |
PDF
|
275.75KB |
|
| 2N3506A |
|
Semico
|
Silicon NPN Transistor |
Original |
PDF
|
198.38KB |
2 |
| 2N3506AJ |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
198.39KB |
2 |
| 2N3506AJS |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
198.39KB |
2 |
| 2N3506AJV |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
198.39KB |
2 |
| 2N3506AJX |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
198.39KB |
2 |
| 2N3506AL |
|
Defense Supply Center Columbus
|
NPN Silicon Switching Transistor |
Original |
PDF
|
100.41KB |
14 |
| 2N3506AL |
|
Microsemi
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN POWER SILICON TRANSISTORS |
Original |
PDF
|
274.83KB |
|
| 2N3506AL |
|
Semico
|
Silicon NPN Transistor |
Original |
PDF
|
202.65KB |
2 |
| 2N3506ALJ |
|
Semico
|
Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
202.64KB |
2 |
| 2N3506ALJS |
|
Semico
|
Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
202.64KB |
2 |
| 2N3506ALJX |
|
Semico
|
Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 |
Original |
PDF
|
202.64KB |
2 |
