2N376 Search Results

2N3767

Abstract: 2N3767 JANTX
Contextual Info: 2N3767 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

150M

Abstract: 2N3763
Contextual Info: 2N3763 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N3763L

Contextual Info: Data Sheet No. 2N3763L Generic Part Number: 2N3763L Type 2N3763L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.

2N3764

Contextual Info: Data Sheet No. 2N3764 Generic Part Number: Type 2N3764 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case. Also available in chip form using

2N3763

Contextual Info: Data Sheet No. 2N3763 Generic Part Number: 2N3763 Type 2N3763 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using

2N3766

Contextual Info: 2N3766 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S h e e t No. 2 N 3 7 6 2 1 1 I I ^88888 % # 1 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3762 Type 2N3762 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D a ta S h e e t No. 2 N 3 7 6 3 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3763 Type 2N3763 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 3 L $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3763L Type 2N3763L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

2N3766

Abstract: 2N3767 JANTX 2N3767
Contextual Info: NPN Power Silicon Transistor 2N3766 & 2N3767 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N3766 2N3767 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2982 (212) 227-8008 FAX: (973) 3784080 2N3762 (SILICON) Medium-current PNP silicon annular transistor, designed for high-speed switching and driver applications. MAXIMUM RATINGS |TA • 7»«C urltwoihnww nai

2N3767SMD

Contextual Info: 2N3767SMD MECHANICAL DATA Dimensions in mm inches 1 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

2N3767

Abstract: LE17
Contextual Info: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

60N60

Contextual Info: 2N3763 Chip: 5.0V; 1.5A; geometry 6706; polarity PNP 7.50 Transistors . 1 of 2 Home Part Number: 2N3763 Online Store 2N3763 Diodes C hip: 5 .0 V; 1 .5 A; geo m et ry 6 7 0 6 ; po larit y PNP Transistors

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

2N3762

Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N3762JAN, JT X , 2 N 3 7 6 3 JA N ,JT X , 2N3764JAN, JT X , 2N3765JAN, JT X , JT X V JT X V JTX V , JA N S JT X V CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkor.Koma N.Y. 11779 Processed per MIL-S-19500 396 PNP Silicon Sm all-Signal Transisto rs

Contextual Info: 2N376A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)50 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)3.0m @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)5.0

Contextual Info: 2N3763+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3763+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3806 2N3906

Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
Contextual Info: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 2 L $ idL SEMICONDUCTORS G eneric Part Number: 2N3762L Type 2N3762L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N3762

Contextual Info: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)