2N3773 POWER AMPLIFIER Search Results

2N3773 NPN Audio Power AMP Transistor

Abstract: 2n3773 power Amplifier 2N3773 2N3773 transistor 2N3773 applications 2n6609 2N3773 applications download 2N3773 equivalent 2N3773 voltage regulator
Contextual Info: 2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solenoid drivers and dc to dc converters or inverters. Features:

SILICON TRANSISTOR CORP 2n3773

Abstract: 2N3773 NPN Audio Power AMP Transistor 2N6609 2N3773 VR1001
Contextual Info: COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,solenoid drivers,and dc to dc converters or inverters. NPN 2N3773 Boca Semicondcutor Corp.

2N6609

Abstract: 2N3773 2n3773 transistor
Contextual Info: H SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners.linear amplifiers,switching

2N3773 NPN Audio Power AMP Transistor

Abstract: CM1630 2N3773 transistor 2N3773 voltage regulator 2n3773 power Amplifier 2N3773 2N6609
Contextual Info: Ëk MOS PEC COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,solenoid drivers,and dc to dc converters or inverters. NPN

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

Contextual Info: Ëk MOS PEC COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,solenoid drivers,and dc to dc converters or inverters. NPN

2N3773

Abstract: 2n3773 power Amplifier
Contextual Info: 2N3773 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! ! TO-3 High Current Capability High Power Dissipation ABSOLUTE MAXIMUM RATING Ta=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage

2n3773 power Amplifier

Abstract: 2N3773 CDIL 2N3773 2N6609
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

2n3773 power Amplifier

Abstract: 2N3773 transistor 2n3773 2N6609
Contextual Info: Transys Electronics L I M I T E D 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

2n3773 power Amplifier

Abstract: 2N3773 2N3773 CDIL 2N3773 transistor 2N3773 equivalent 2N6609 2n3773rev280202e power transistor selection
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM RATINGS

2n3773

Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

2N3773

Abstract: 2N3773 transistor 2N3773 applications 2N3773 NPN Transistor 0015923C JESD97 transistor marking SUs
Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

2N3773

Abstract: 2N3773 transistor 0015923C 2n3773 power Amplifier JESD97
Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage s ct Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

2N3773 MOTOROLA

Abstract: 2N6667 1N5825 2N3773 2N6387 2N6388 2N6609 2N6668 MSD6100 2N3773 applications
Contextual Info: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2N434B

Abstract: 2N6259
Contextual Info: i, Line. <z3E,ml-L.onauctoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3773, 2N4348, 2N6259 Hometaxial-Base, High-Current Silicon N-P-N Transistors Features: • High dissipation capability 120 W I2N4348), 150 W (2N3773), 250 W (2N6269)

2N3773 voltage regulator

Abstract: 2n3773 power Amplifier 2N3771 2N3772 APPLICATIONS westinghouse transistors 2N3771-73
Contextual Info: POUEREX I T D 54-673 Page 7 Silicon Power T ransistors J E D E C Types 2N3771 -73 Westinghouse > £ Dimensions in Inches Œ M M H CO |— . 3 7 5 Ik -o o m .13 5 Maximum i_ £ Seotlng Plan« .3 1 2 Minimum JO m x L Like all Westinghouse JEDEC-type silicon

2n3773 power Amplifier

Abstract: 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

complement of 2N3053

Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

2N3055

Abstract: 2n3773 power Amplifier 2N3442 2N1487 2N1488 2N1489 2N1490 2N3232 2N3235 STC40251
Contextual Info: Silicon power transistors IlFE @ Ic/VCE Type# IS/b Vce sat ] @ Ic / I b VcEO|SUS| (Volts (Min-Max @ A/V) (V @ A/A) Vbe @ Ic:/V cf (V @ A/V) ICEV @ Vce (mA @ V) @ Vce Pd @ t — 11sec Tc = 25°C 0 J C (Watts) (°C/W) (A @ V) tO N fi (MHz) 2N1487 40 15-45@1.5/4

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

RCA 40411 transistor

Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.