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    2N3788 Price and Stock

    Microchip Technology Inc 2N3788

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    2N3788 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3788 Advanced Semiconductor Silicon Transistors Scan PDF
    2N3788 Diode Transistor Silicon Transistors Scan PDF
    2N3788 Diode Transistor Transistor Short Form Data Scan PDF
    2N3788 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3788 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3788 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3788 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3788 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3788 Unknown Vintage Transistor Datasheets Scan PDF
    2N3788 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3788 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3788 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3788 Unknown Transistor Replacements Scan PDF
    2N3788 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3788 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N3788 Pirgo Electronics 5 Amp NPN Silicon Transistors Scan PDF
    2N3788 Pirgo Electronics High Voltage Transistors in TO-3 Scan PDF
    2N3788 PPC Products Transistor Short Form Data Scan PDF
    2N3788 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N3788 Solid Power High Voltage Transistors in TO-3 Package Scan PDF

    2N3788 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDT5055

    Abstract: SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788
    Text: hFE V Device VCEO @ IC A CE (sat) @ IC (A) Type (V) Min/Max Max (V) 2N2150 80 20/60 1.0 1.25 1.0 2N2151 80 40/120 1.0 1.25 1.0 2N3788 325 20/180 0.5 1.00 1.5 2N3917 40 30/120 1.0 1.20 1.0 2N3918 40 100/300 1.0 1.20 1.0 2N4300 80 30/120 1.0 0.50 0.2 2N4862


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    PDF 2N2150 2N2151 2N3788 2N3917 2N3918 2N4300 2N4862 2N4863 2N4864 2N4998 SDT5055 SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788

    BUX79

    Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original
    PDF 2SD1017 2N6211 MJ3026 2SC1031 D44T3 D44T4 MJ3585 MJ4240 BUX79 SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801

    SOLID POWER CORP

    Abstract: 2N3902 2N3788
    Text: 8365700 SOLIO POWER CORP 95 C 0 0 1 0 8 S O L ID PODER CORP "is l~" 3 3 - o ! o DüT|ñ3bS7G0 DODOlOñ 3 HIGH VOLTAGE TRANSISTORS @ @ le VCEO le o O M AX SUS V MA A 2.0 325 3.5 325 100 3.5 4ÛÔ O O PT @ 25°C Watts 2N3788 100 12N3902 100 12N5157 1Ô0 ♦Vcex @ 25°C


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    PDF -p-33-OÃ 2N3788 12N3902 I2N5157 2N3902 TWX-510-224-6582 SOLID POWER CORP 2N3902

    2N3902

    Abstract: 2N5157 2N515 HFI9 l5a1 2N3788
    Text: A P I ELECTRONICS INC 00433^2 Goooaab soo LIE D mine T -3 * I 3 HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. Ic 325 15 4ÖÖ 1ÔÔ 20 @ 25°C 325 V MA 400 400 5ÔÔ VcEX @ 9 @ lo o in 3.5 100 100 V ceo q ' su s V MA MAX Watte A 2N3788 1Q0 2N3902 100 2N5157 1ÔÔ


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    PDF 2N3788 2N3902 2N5157 2N3902 TWX-510-224-6582 2N515 HFI9 l5a1

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M ÀX sui V MA Watts A 2N3788 1Q9 2N3902 100 2N5157 1ÖÜ V lao MA @ V cex Ic 125°C MA V ?25 100 400 5-9 325 100 400 .25 700* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5 2,0 3.5 15 *Vcex @ 25°C @ Veto


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    PDF 2N3788 2N3902 2N5157 2N3902 2N5157 TWX-510-224-6582 O-114 00435c X-510-224-6582

    2N3751

    Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
    Text: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN


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    PDF 0D0D223 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N4300 2N4305 2N4307 2N3853 2N3902 2N3928 2N3929

    tca 765

    Abstract: 2N3902 2883 TCA 325 A to-53 2N3788 2N5157 Beta SL
    Text: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M À X su i V MA Watts A 2N3788 1Q9 2N3902 100 2N 5157 1ÖÖ *V cex @ 2,0 3.5 15 25°C @ Veto V @ lao V cex Ic 125°C MA V MA Hfe ?25 100 400 5-9 325 100 400 .25 7 00* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5


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    PDF 2N3788 2N3902 2N5157 2N3902 TWX-510-224-6582 ioH151- O-114 -24UHFâ TWX-510-224-6582 tca 765 2883 TCA 325 A to-53 Beta SL

    JANTX2N5157

    Abstract: 2N3445
    Text: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598


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    PDF NPN-17 JANTX2N5157 2N3445

    SDT423

    Abstract: 2N3021 2N5076 2N5666 SDT5055 2N2150 2N2151 2N3788 2N3917 2N3918
    Text: m |p tu)©Tr ©Aim ® i_ B-2 VCE sat) @ MAX (V) ic (A) IT MIN (MHz) Pj MAX (W) CASE TYPE CHIP TYPE 2N2150 2N2I51 2N3788 2N3917 2N3918 80 80 325 40 40 20/60 40/120 20/180 30/120 100/300 1.0 1.0 0.5 1.0 1.0 1.25 1.25 1.00 1.20 1.20 1.0 1.0 1.5 1.0 1.0


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    PDF 2N2150 O-111 2N2151 2N3788 2N3917 2N3918 2N4300 2N4862 2N4863 SDT423 2N3021 2N5076 2N5666 SDT5055

    2N3902

    Abstract: 2N3902 JANTX 2n5157 2N3788
    Text: HIGH VOLTAGE TRANSISTORS TO pt TYPE NO. lc lc Veto u i. SÜS MAX MA V 2d n A 100 *V ce x 2,0 325 325 400 3.5 3.5 109 100 o o 2N3788 10Q 2N3902 2 n 5157 100 <$ le VCEO ICEO V cex 125eC MA MA V V 100 5-9 .25 700* 2.5 .25 7 o o ' .5 400 500 •+JAN and JANTX


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    PDF 125eC) 2N3788 2N3902 2N3902 2N5157 TWX-510-224-6582 2N3902 JANTX 2n5157

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


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    PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


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    PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


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    PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    2N4122

    Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
    Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741


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    PDF DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135

    SDT423

    Abstract: No abstract text available
    Text: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A


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    PDF 00D57SA 2N2150 2N2151 2N3788 2N3917 2N3918 O-111 2N3025 2N3026 SDT423

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


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    PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    JANTX2N

    Abstract: jan2n1482 15218 Jan2N3055
    Text: ,' O r N i f i y û N C 0 i n \ Û N C Û J ' O r f N ^ T - i n C 0 î ' C 0 f f ' r m o ^ o r N r n ^ L n \ D h s . o o O ^ O O N N N N N N N r r r r - r ( N f N ( N ( N < N ( N ( N i N i n i n r inhvCO^rnrnrOrnrOrnm^'kO . , , , . , . , . , . s) N


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    PDF JANTX2N3772 JAN2N1479 JAN2N1480 JAN2N148Ì JAN2N1482 AN2N14S3 IANTX2N1483 JAN2N1484 JANTX2N1482 JANTX2N1485 JANTX2N jan2n1482 15218 Jan2N3055

    2N3016

    Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
    Text: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 MT-13 2N1720 2N3016 SDT5052