2N3819 JUNCTION FET Search Results

Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. RelY08| RelYfel @ C|SS NF ^rss @ TO-92 V BR GSS v GS(off) (V) loss PIN OUT @ (mmho) f Qimho) f <PF) (PF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) TO-92 2N3819

2N5485

Abstract: 2N5951 2N4416 2N5950 2N5952 Variable resistor 50K ohm 2N3819 2N4416A 2N5484 2N5486
Contextual Info: Junction FETs RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re IYfsl Re IYosj @ C|SS NF rs* @ V BR GSS TO-92 v GS(off) loss PIN OUT @ (mmho) f Qimho) f <PF) <PF) <dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) (V) TO-92 2N3819

2N3819

Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
Contextual Info: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92

Contextual Info: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1

transistor 2N3819

Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION

transistor 2N3819

Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N

2N5952

Contextual Info: Junction fets* RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re lYfel R IYqsI & c iss NF c rss @ TO-92 V BR GSS vGS(off) (V) •d s s PIN OUT @ (mmho) f Ounho) f (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0 4.0

2N5949

Abstract: 2N5951 2N5953 2N5952 2n3819
Contextual Info: Junction FETs RF Amplifiers TO-72 N-Channel C A SE TYPE NO. Re lYfgl Re IY0S| c is s NF ^rss @ V BR G SS TO-92 v GS(off) •d s s PIN OUT @ (mmho) f Oimho) i (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) 00 TO-92

RF Amplifiers

Abstract: 2n5952 equivalent 2N3819 equivalent transistor 2N5952 datasheet 2n5484 jfet 2N5951 2n4416 2n4416 jfet 2N5952 2n5484 equivalent
Contextual Info: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ (µmho) f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC

2N5950

Abstract: 2N5952
Contextual Info: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ µmho) (µ f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC

PN4360

Abstract: pn3687
Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2n5951 2N5245 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305
Contextual Info: bflE D • bSDllBO □ D 3 cm ci,:i SS7 INSCS NATL SEMICOND DISCRETE TO -52 N Channel DG VP@VDSID m BVqsj Device (V) Min (V) Min Max 2N3819 25 2N4416 30 2.5 im 8 15 2 6 15 RelYfsl NF Re(Yos) Clss Crss (dB)@Rg = 1k (mmho) @ f (limho) @ f Package (PF) (PF)

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

date code IEC 62

Abstract: bc107a pin out BC237 bf256c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage

BC237

Abstract: 2N3819 junction fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN  Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Contextual Info: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k

BC237

Abstract: Fet BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V

BC237

Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

BC237

Abstract: MSA1022 msc2295 BF391 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for

BC237

Abstract: transistor TO-92 bc108 VN10lM equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE  1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous

BC237

Abstract: BC857A MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,

2N3819 fet

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

2N3819 junction fet

Abstract: 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage

BC237

Abstract: 2N7000 Fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR