2N3866 APPLICATION Search Results

2N3866A

Abstract: 2n3866 Transistor 2N3866
Contextual Info: 2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

transistor c5

Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
Contextual Info: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

2N3866 metal

Abstract: 2N3866 Transistor 2N3866
Contextual Info: NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Compliance to RoHS.

2N3866A

Abstract: 2N3866 Transistor 2N3866 2C3866A 2N3866AUB SD3866A SD3866AF SQ3866A SQ3866AF 2C3866
Contextual Info: Data Sheet No. 2C3866A Generic Packaged Parts: Chip Type 2C3866A Geometry 1007 Polarity NPN 2N3866, 2N3866A Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N3866A, 2N3866, 2N3866AUB, SD3866A, SD3866AF, SQ3866A, SQ3866AF

2N3866

Abstract: Transistor 2N3866 1202 transistor
Contextual Info: 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG

2N3866 JANTXV

Abstract: 2N3866A JAN
Contextual Info: 2N3866 A Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a low profile UB package.

2N3866A

Abstract: Transistor 2N3866 2N3866 RF 2N3866 15-September
Contextual Info: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

Contextual Info: 2N3866 A UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a top hat leaded TO-205AD package.

TRANSISTOR BFR97

Abstract: BFR97 2N3866 2N3866 SCHEMATIC 2N3866-BFR97 2N3866 metal Planar choke Transistor 2N3866 data 2n3866
Contextual Info: 30E D • 7^53537 0031187 b ■ \ ‘3 > 0 5 SGS-THOMSON IMOœiLlICTliMOûS 2N3866 BFR97 S G S-TH0MS0N VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A, B, or C amplifier cir­

2N3866

Contextual Info: 2N3866 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) NPN SILICON HIGH FREQUENCY TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)

2n3866

Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial

2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427
Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product

RF 2N3866

Abstract: Transistor 2N3866 2N3866A 2N3866 RF NPN POWER TRANSISTOR 1000 WATT npn UHF transistor 2N3866 equivalent UHF power TRANSISTOR PNP TO-39 2N4427 2N6255
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics

2n4427

Abstract: 2N3866
Contextual Info: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the

mrf571

Abstract: 2N3866
Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product

2N3866

Abstract: Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics

2N3866 MOTOROLA

Abstract: s-parameter 2N3866 motorola 2N3866 2N3866 2n3866a Motorola 2n3866 211 2N3866 equivalent data 2n3866 sm 190 e3055
Contextual Info: MOTOROLA SEM ICO NDUCTOR 2N3866 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 MHz H IG H FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQ UENCY TRANSISTOR NPN SILIC O N . . . designed for a m plifier and oscillator applications in m ilita ry and industrial equipment. Suitable for use as o utp ut, driver or pre-driver

RCA 2N3866

Abstract: 2N3866 RF output Design 2N3866 RCA-2N3866 2N3866 RF CLASS A 2N3866 class-a rca 0190 transistor rca 711 transistor c3-12 2N3866 metal
Contextual Info: File No. 80 DQQBÆ] ^ Pow er T ra n s is to rs Solid State Division 2N3866 Silicon N-P-N Overlay Tran sisto r High-Gain Driver for V H F /U H F Applications in M ilitary and Industrial Communications Equipment Features • High Power Gain, Unneutralized Class C A m plifier

2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

MRF transistor mrf 304

Abstract: 107j capacitor MRF transistor mrf 1300 MRFS81 capacitor 107J 2N3866A
Contextual Info: m m a RF Products m Micmsemi P ro g re s s P o w e re d b y T e c h n o lo g y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor

2N3866 MOTOROLA

Abstract: s-parameter 2N3866A 2n3866a Motorola 2N3866 motorola 2N3866
Contextual Info: MOTOROLA SC XSTRS/R F b3b?254 0QT4032 MOTOROLA b •MOTt T - 3 3 -¿>5 ■ SEMICONDUCTOR 2N38G6 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 M Hz HIGH FREQ UEN C Y TRANSISTOR NPN SILICON HIGH FREQ UEN C Y TRANSISTOR N P N S IL IC O N . . designed for am plifier and oscillator applications in m ilitary and

rca 2n3375

Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Contextual Info: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

MRF306

Abstract: 2N3866 2N6166 2n5643 transistors for oscillators uhf mrf313a 2N5641 MRF905 2n3866 211 2N5636
Contextual Info: f Device Type ^ Pout O utput Power Watts g PE Power Gain dB Min. V cc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO-39 TO-39 144B-04 145A-07 145A-07 211-10 A 10 10 16 Typ 16 (Typ) 12 6.2 11 5.7 9.0 10 4.6 6.0 6.0 8.0 8.0 28 28 28