| 2N3998J |
|
Semico
|
Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.25 |
|
Original |
PDF
|
169.61KB |
2 |
| 2N3998JAN |
|
Microsemi
|
NPN POWER SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
55.28KB |
2 |
| 2N3998JAN |
|
API Electronics
|
Short form transistor data |
|
Short Form |
PDF
|
216.5KB |
2 |
| 2N3998JAN |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
135.23KB |
4 |
| 2N3998JANTX |
|
Microsemi
|
NPN POWER SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
55.28KB |
2 |
| 2N3998JANTX |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
135.23KB |
4 |
| 2N3998JANTXV |
|
Microsemi
|
NPN POWER SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
55.28KB |
2 |
| 2N3998JANTXV |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
135.24KB |
4 |
| 2N3998JTX |
|
New England Semiconductor
|
NPN POWER SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
30.29KB |
2 |
| 2N3998JTX |
|
API Electronics
|
Short form transistor data |
|
Short Form |
PDF
|
216.5KB |
2 |
| 2N3998JTXV |
|
New England Semiconductor
|
NPN POWER SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
30.29KB |
2 |
| 2N3998JTXV |
|
API Electronics
|
Short form transistor data |
|
Short Form |
PDF
|
216.5KB |
2 |
| 2N3998JV |
|
Semico
|
Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.25 |
|
Original |
PDF
|
169.61KB |
2 |
| 2N3998JX |
|
Semico
|
Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.25 |
|
Original |
PDF
|
169.61KB |
2 |
