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    2N4393 DIE CHIP Search Results

    2N4393 DIE CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    2N4393 DIE CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4393

    Abstract: 2n4393 replacement
    Text: 2N4393 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N4393 FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4393 LOW ON RESISTANCE rDS on ≤ 100Ω LOW GATE OPERATING CURRENT ID(off) = 5pA FAST SWITCHING


    Original     		PDF 2N4393 2N4393 1800mW 2n4393 replacement

    2N4393

    Abstract: 2N4393 DIE CHIP cp206 GEOMETRY 2N4391 2N4391 ADAM transistor 2n4391 2N4392 CMPF4391 CMPF4392
    Text: CP206 PROCESS Central Small Signal Transistors TM Semiconductor Corp. N - Channel Switch/Chopper J FET Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21 x 18 MILS Die Thickness 8.0 MILS Drain Bonding Pad Area 3.8 X 3.8 MILS Source Bonding Pad Area


    Original     		PDF CP206 2N4391 2N4392 2N4393 CMPF4391 CMPF4392 CMPF4393 Semicondu000Å 2N4393 2N4393 DIE CHIP cp206 GEOMETRY 2N4391 2N4391 ADAM transistor 2n4391 2N4392 CMPF4391 CMPF4392

    Linear Integrated Systems

    Abstract: No abstract text available
    Text: LS4393 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N4393 FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4393 LOW ON RESISTANCE rDS on ≤ 100Ω LOW GATE OPERATING CURRENT ID(off) = 5pA FAST SWITCHING


    Original     		PDF LS4393 2N4393 1800mW LS4393 Linear Integrated Systems

    ls4393

    Abstract: No abstract text available
    Text: LS4393 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N4393 FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4393 LOW ON RESISTANCE rDS on ≤ 100Ω LOW GATE OPERATING CURRENT ID(off) = 5pA FAST SWITCHING


    Original     		PDF LS4393 2N4393 350mW OT-23 LS4393

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		PDF MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic

    op77

    Abstract: OP-77 5962-8773802PA OP77EZ IRF520 equivalent 2N4393 DIE CHIP 5962-8773802GA 5962-87738012A OP77GP
    Text: a Next Generation OP07 Ultralow Offset Voltage Operational Amplifier OP77 FEATURES Outstanding Gain Linearity Ultrahigh Gain 5000 V/mV Min Low VOS Over Temperature 60 ␮V Max Excellent TCVos 0.3 ␮V/؇C Max High PSRR 3 ␮V/V Max Low Power Consumption 60 mW Max


    Original     		PDF 08A/308A, OP77NBC op77 OP-77 5962-8773802PA OP77EZ IRF520 equivalent 2N4393 DIE CHIP 5962-8773802GA 5962-87738012A OP77GP

    OP77

    Abstract: OP77B 2N4393 OP07 OP77FJ OP77G OP-77 RESISTOR POTENTIOMETER
    Text: Next Generation OP07 Ultralow Offset Voltage Operational Amplifier OP77 Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 V max Excellent TCVOS, 0.3 μV/°C max High PSRR, 3 μV/V max Low power consumption, 60 mW max Fits OP07, 725,108A/308A, 741 sockets


    Original     		PDF 08A/308A, 22306-A OP77FJ OP77FJZ OP77EZ OP77FZ OP77NBC D00320-0-4/10 OP77 OP77B 2N4393 OP07 OP77FJ OP77G OP-77 RESISTOR POTENTIOMETER

    OP77

    Abstract: JEDEC 1N4148 OP-77 2N4393 OP77B OP77G OP07 OP77FJ precision threshold detector 741 op amp circuit OP77FJZ
    Text: Next Generation OP07 Ultralow Offset Voltage Operational OP77 Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 V max Excellent TCVOS, 0.3 μV/°C max High PSRR, 3 μV/V max Low power consumption, 60 mW max Fits OP07, 725,108A/308A, 741 sockets


    Original     		PDF 08A/308A, 22306-A OP77FJ OP77FJZ OP77EZ1 OP77FZ1 OP77NBC D00320-0-6/09 OP77 JEDEC 1N4148 OP-77 2N4393 OP77B OP77G OP07 OP77FJ precision threshold detector 741 op amp circuit

    OP77

    Abstract: oP-77 OP77FJ
    Text: Next Generation OP07 Ultralow Offset Voltage Operational Amplifier OP77 Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 µV max Excellent TCVOS, 0.3 µV/°C max High PSRR, 3 µV/V max Low power consumption, 60 mW max Fits OP07, 725,108A/308A, 741 sockets


    Original     		PDF 08A/308A, 22306-A OP77FJ OP77FJZ OP77EZ OP77FZ OP77NBC D00320-0-4/10 OP77 oP-77 OP77FJ

    OP77

    Abstract: 5962-8773802PA 5962-8773802GA 2N4393 OP77B 8773802ga OP07 2n2907 smd 2n2907 metal can
    Text: a Next Generation OP07 Ultralow Offset Voltage Operational Amplifier OP77 FEATURES Outstanding Gain Linearity Ultrahigh Gain 5000 V/mV Min Low VOS Over Temperature 60 ␮V Max Excellent TCVos 0.3 ␮V/؇C Max High PSRR 3 ␮V/V Max Low Power Consumption 60 mW Max


    Original     		PDF 08A/308A, OP77B OP77G C00320 10/02--Data OP77 5962-8773802PA 5962-8773802GA 2N4393 8773802ga OP07 2n2907 smd 2n2907 metal can

    OP77

    Abstract: 2n2907 smd 2N4393 OP07 op77ej circuit diagram irf520
    Text: a Next Generation OP07 Ultralow Offset Voltage Operational Amplifier OP77 FEATURES Outstanding Gain Linearity Ultrahigh Gain 5000 V/mV Min Low VOS Over Temperature 60 ␮V Max Excellent TCVos 0.3 ␮V/؇C Max High PSRR 3 ␮V/V Max Low Power Consumption 60 mW Max


    Original     		PDF 08A/308A, OP77B OP77G C00320 OP77 2n2907 smd 2N4393 OP07 op77ej circuit diagram irf520

    LTC6654

    Abstract: TECATE 914 LT6655 LTC6655LS8 LTC6655MS8 LTC6655BHMS8
    Text: LTC6655 0.25ppm Noise, Low Drift Precision References FEATURES DESCRIPTION Low Noise: 0.25ppmP-P 0.1Hz to 10Hz 625nVP-P for the LTC6655-2.5 n Low Drift: 2ppm/°C Max n High Accuracy: ±0.025% Max n No Humidity Sensitivity (LS8 Package) n Thermal Hysteresis (LS8): 30ppm (–40°C to 85°C)


    Original     		PDF LTC6655 25ppm 25ppmP-P 625nVP-P LTC6655-2 30ppm 20ppm/kHr 10ppm/mA 500mV 10ppm/ LTC6654 TECATE 914 LT6655 LTC6655LS8 LTC6655MS8 LTC6655BHMS8

    6655FC

    Abstract: No abstract text available
    Text: LTC6655 0.25ppm Noise, Low Drift Precision References Features Description Low Noise: 0.25ppmP-P 0.1Hz to 10Hz 625nVP-P for the LTC6655-2.5 n Low Drift: 2ppm/°C Max n High Accuracy: ±0.025% Max n No Humidity Sensitivity (LS8 Package) n Thermal Hysteresis (LS8): 30ppm (–40°C to 85°C)


    Original     		PDF LTC6655 25ppm 25ppmP-P 625nVP-P LTC6655-2 30ppm 20ppm/kHr 10ppm/mA 500mV 10ppm/ 6655FC

    2sk170bl spice

    Abstract: 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 motorola power fet rf databook BB140-01 small signal transistor MOTOROLA DATABOOK Philips X7R capacitors
    Text: RF Manual product & design manual for RF small signal discretes Page: 1 RF Manual product & design manual for RF small signal discretes Volume 0 March 2002 RF Manual product & design manual for RF small signal discretes Content 1. 2. 3. 4. Introduction RF Basics


    Original     		PDF BGA2003 BGA2022 BFG425W 2sk170bl spice 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 motorola power fet rf databook BB140-01 small signal transistor MOTOROLA DATABOOK Philips X7R capacitors

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


    Original     		PDF BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767

    2N4393

    Abstract: DIE CHIP 2N4091 2N4091 2N4093 2N4391 2N4856 2N4861 KK4391 KK4393
    Text: -Ælttran [¡^ EiüKgTr ©Äim © Devices. Inc N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALUZATLON Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .023" (0.584mm It is advisable that: a) the die be eutecticaUy mounted with gold silicon preform 98/2% .


    OCR Scan     		PDF 584mm) 0254mm) 2N4393 DIE CHIP 2N4091 2N4091 2N4093 2N4391 2N4856 2N4861 KK4391 KK4393

    DIE CHIP 2N4091

    Abstract: 2N4393 DIE CHIP
    Text: ÄTTÄ[L N-CH ANNEL JUNCTIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .023" It is advisable that: a the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 584mm) 0254mm) 100mV, DIE CHIP 2N4091 2N4393 DIE CHIP

    2N4391

    Abstract: 2N4392
    Text: 2N4391 SERIES N-Channel JFETs The 2N4391 Series features many of the superior characteristics of JFETs. Its low on-resistance and fast switching make it a good choice for demanding analog switching applications, while its high-gain, low-noise, and impressive frequency response make it the choice


    OCR Scan     		PDF 2N4391 M1L-S-19500. 2N4392 2N4393 2N4393 3000X1

    Untitled

    Abstract: No abstract text available
    Text: N -C H A N N E L J U N C T IO N FET CHIP NUMBER GW-1] CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS .023" 0.584mm Dm Size: It is advisable that: 18 x 2 3 a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 584mm) 0254mm) 2N4091 2N4093, 2N4391 2N4393, 2N4856 2N4861, KK4391 KK4393

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


    OCR Scan     		PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10