2N5004
Abstract: No abstract text available
Text: Data Sheet No. 2N5004 Generic Part Number: 2N5004 Type 2N5004 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/534 Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case.
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2N5004
MIL-PRF-19500/534
MIL-PRF-19500/534
2N5004
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2N5004
Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5004
2N5005
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
2N5004
2N5004 JANTXV
NPN/transistor C 331
switching transistor 331
2N5004J
2N5004JV
2N5005
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Untitled
Abstract: No abstract text available
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5004J
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2N5004
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
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Untitled
Abstract: No abstract text available
Text: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5005
2N5004
MIL-PRF-19500
2N5005J)
2N5005JX)
2N5005JV)
MIL-STD-750
MIL-PRF-19500/535
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2N5004
Abstract: 2N5002
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS
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MIL-PRF-19500/534
2N5002
2N5004
500mA,
10MHz
10Vdc
500mAdc
-500mAdc
2N5004
2N5002
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2N5004
Abstract: transistor+2N5002 2N5002 JANTXV2N5004
Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices Qualified Level 2N5002 JAN JANTX JANTXV 2N5004 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C 1
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MIL-PRF-19500/534
2N5002
2N5004
2N5004
transistor+2N5002
2N5002
JANTXV2N5004
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2N5004
Abstract: 2N5005 2N5005J 2N5005JV 2N5005JX
Text: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5005
2N5004
MIL-PRF-19500
2N5005J)
2N5005JX)
2N5005JV)
MIL-STD-750
MIL-PRF-19500/535
2N5004
2N5005
2N5005J
2N5005JV
2N5005JX
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2N5004
Abstract: No abstract text available
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
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2N5004
2N5005
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
2N5004
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2n0004
Abstract: 2N5004 TO-59 Package 2N7373 2N5002 2N5003 2N5005 transistor 2N5002 cc 3053
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 20 October 2008. MIL-PRF-19500/534F 20 July 2008 SUPERSEDING MIL-PRF-19500/534E 27 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5002 AND 2N5004,
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MIL-PRF-19500/534F
MIL-PRF-19500/534E
2N5002
2N5004,
MIL-PRF-19500/613.
2n0004
2N5004
TO-59 Package
2N7373
2N5003
2N5005
transistor 2N5002
cc 3053
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2N0004
Abstract: 2N5002 transistor 2N5002 2N5003 2N5004
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 October 2001. INCH-POUND MIL-PRF-19500/534C 31 July 2001 SUPERSEDING MIL-PRF-19500/534B 30 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
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MIL-PRF-19500/534C
MIL-PRF-19500/534B
2N5002,
2N5004,
2N0004
2N5002
transistor 2N5002
2N5003
2N5004
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2N7373
Abstract: 2N7373 transistor 2N5004
Text: INCH-POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 28 March 1998 MIL-PRF-19500/613A 28 December 1997 SUPERSEDING MIL-S-19500/613 30 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/613A
MIL-S-19500/613
2N7373,
MIL-PRF-19500.
O-254AA)
2N7373
2N7373 transistor
2N5004
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MC 3041
Abstract: 2N7373 2N5004 TO-59 Package 3066
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 June 2009. MIL-PRF-19500/613C 10 March 2009 SUPERSEDING MIL-PRF-19500/613B 14 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/613C
MIL-PRF-19500/613B
2N7373,
MIL-PRF-19500.
MC 3041
2N7373
2N5004
TO-59 Package
3066
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NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *
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2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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2N5077
Abstract: 2N5076 2N5348 2N5288 2N5317 2N5006 2N5008 2N5319 2N6128 2N5347
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 sus VOLTS Ic (max) AMPS V c eo PACKAGE DEVICE TYPE V Vc e (min/max @ A/V) ^FE@ V CE(jat) @ Ic^B (V @ A/A) p * r D fx WATTS (MHz) NPN 2N5006 80 10 30-90@5/5 1.5@10/1 67 30 TO-61 2N5008 80 10
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2N5006
2N5008
2N5288
2N5317
2N5319
2N6128
2N6689
2N6690
2N6691A
2N6692
2N5077
2N5076
2N5348
2N5347
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2N5076
Abstract: TO61 package 2N5004 JANTXV 2n5349 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 V c eo Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS NPN TO-61 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N6693A 80 80 100 80 100 80 300 400 300 350 400 10 10 10 10
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2N5006
2N5008
2N5288
2N5317
2N5319
2N6128
2N6689
2N6690
2N6691A
2N6692
2N5076
TO61 package
2N5004 JANTXV
2n5349
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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