2N5157 Search Results

2N5157

Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A

2N3902

Abstract: 2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

2N3902

Abstract: 2N5157 JANTX2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

thyri

Contextual Info: 2N5157 Si NPN Power BJT 15.63 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N5157 Online Store 2N5157 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage Ratings VCEO 400 500 Vdc Emitter - Base Voltage

2N5157

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 371 Qualified Level Devices 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

2N3902

Abstract: 2N5157 2N515 HFI9 l5a1 2N3788
Contextual Info: A P I ELECTRONICS INC 00433^2 Goooaab soo LIE D mine T -3 * I 3 HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. Ic 325 15 4ÖÖ 1ÔÔ 20 @ 25°C 325 V MA 400 400 5ÔÔ VcEX @ 9 @ lo o in 3.5 100 100 V ceo q ' su s V MA MAX Watte A 2N3788 1Q0 2N3902 100 2N5157 1ÔÔ

2n3902

Contextual Info: NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage Ratings VCEO 400 500 Vdc Emitter - Base Voltage

2N5157

Contextual Info: Product Specification www.jmnic.com 2N5157 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING See Fig.2 PIN DESCRIPTION

2N3902

Abstract: 2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current

2N5157 JANTX

Contextual Info: 2N5157 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M ÀX sui V MA Watts A 2N3788 1Q9 2N3902 100 2N5157 1ÖÜ V lao MA @ V cex Ic 125°C MA V ?25 100 400 5-9 325 100 400 .25 700* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5 2,0 3.5 15 *Vcex @ 25°C @ Veto

Contextual Info: 2N5157+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)500 V(BR)CBO (V)700 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n3788

Abstract: 2N3902
Contextual Info: HIGH VOLTAGE TRANSISTORS PT @ Veto Ic Ic @ SUS 25°C M A X TYPE NO. Watts 2 N 3788 TOO 2N 3902 100 2N5157 10Ö *Vcex@25°C * * tT A V 2.Q 3.5 3.5 325 325 4ÔÔ MA @ V ceo leeo VCEX cS? hrt IC !125°C V 100 400 100 400 1ÓÒ 5Ó0 MA V MA 5.0 .25 700* 2.5

2N5239

Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251
Contextual Info: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50

2N5157

Abstract: 2N3440
Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRAN SISTO R HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILITA R Y APPLICATIONS • 100 W at 75° C Case Temperature • 700 V Collector-Emilter Off-State Voltage • Min V BR CEO o f 400 V •

2n5157

Contextual Info: SavantIC Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING See Fig.2 PIN

SDT423

Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
Contextual Info: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664

Contextual Info: 2N5157 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 2N5157 2N5157 2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

Contextual Info: 2N5157+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)500 V(BR)CBO (V)700 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

DTS-425

Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce