2N5179 Search Results

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2N5179

Contextual Info: 2N5179 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5179 Availability Online Store

2n5179 motorola

Abstract: MMBR5179
Contextual Info: 1EE D I I MOTOROLA SC XSTRS/R T - 3 i- n F MOTOROLA S E M IC O N D U C T O R h h h b TECHNICAL DATA The RF Line MMBR5179 Die Source S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed for small-signal amplification at frequencies to 500 MHz. Specif­

marking 25b sot23

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if­

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

PN3563

Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Contextual Info: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

RCA-2N5179

Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Contextual Info: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as

2N5179

Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

MMBR5179L

Abstract: 2n5179 gs noise
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR5179L The RF Line Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed fo r sm alt-sig n a l a m p lific a tio n at fre q u en cies to 500 MHz. S p e cif­ ically packaged fo r use in th ick and th in -film circuits using surface m o u n t

transistor 2N5179

Abstract: 2N5179
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO 20 Collector -Base Voltage VCEO 12 Collector -Emitter Voltage

D0312

Abstract: HA20 T3115
Contextual Info: 3QE D • o o a i s s 6 7 m s f Z 7 S G S -T H O M S O N “ 7# [f [L IO T s« S T T 2 N5179 S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up

2N5179

Abstract: D 431
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

2N5179

Contextual Info: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5179 TO-72 NPN SILICON PLANAR TRANSISTOR Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO Collector -Base Voltage

Contextual Info: 2N5179 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5179 type is a silicon NPN RF transistor, manufactured by the epitaxial planar process, designed for VHF/UHF amplifier, oscillator, and converter applications.

2N5179

Contextual Info: 2N5179/PN5179/MMBT5179 National I Semiconductor 2 PN5179 2N5179 MMBT5179 C /^ O T frJJ ^ 7 VK /M / jf /M U E- U D r. C TO- 7 2 ,y u TL/G/10100-12 \ A b u iv itr T 0 ’ 256 TO -9 2 (SOT -2 3 TL/G/10100-5 TL/G/10100-1 NPN RF Transistor Electrical Characteristics

2SC817

Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
Contextual Info: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200

TCA 875

Abstract: 2n5179
Contextual Info: SGS-THOMSON RülDOæilLICTiOiDeS 2N 5179 VHF/UHF AMPLIFIER D E S C R IP T IO N The 2N5179 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoisetuned-amplifier and converter applications up to 500 MHz. IN T E R N A L S C H E M A T IC D IA G R A M

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION

schematic diagram dc converter 72 v to 12 v

Abstract: M 500 ma, 250 V 2N5179
Contextual Info: 3QE P • T'ìe'ìsa? Q O a i S S 6 7 S C S -T H O M S O N t^D g[H](s)iQ3i(Sir[R] [M10 i m — ■ ' 2N 5179 S G S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up

2n5179

Abstract: t-31-21 MMBT5179
Contextual Info: 2N5179/PN5179/MMBT5179 p - NATL SEMICOND DISCRETE - H E D | bS011i30 National _ Semiconductor PN5179 2N5179 Q[]372Mfl fl | T-3/-2I MMBT5179 TL/G/10100-5 NPN RF Transistor Electrical Characteristics T a = 25°C unless otherwise noted Min P aram eter Sym b o l

MOTOROLA 2N5179

Abstract: 2N5179 motorola 2n5179
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3 b 7 2 S 4 OGT HÜT b 4 • MOTb D MOTOROLA “T=3l-lS ■ SEMICONDUCTOR i TECHNICAL DATA 2N5179 The RF Line 4.5 dB @200 MHz HIGH FR E Q U E N C Y TR A N S IS TO R NPN SILIC O N NPN S ILIC O N R F HIGH F R E Q U E N C Y TR A N S IS TO R