2N5179 NOISE Search Results

2N5179

Contextual Info: 2N5179 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5179 Availability Online Store

RCA-2N5179

Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Contextual Info: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as

2N5179

Abstract: schematic diagram dc converter 72 v to 12 v 714PS
Contextual Info: 2N5179 VHF/UHF AMPLIFIER DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up to 500 MHz. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

2n5179

Abstract: t-31-21 MMBT5179
Contextual Info: 2N5179/PN5179/MMBT5179 p - NATL SEMICOND DISCRETE - H E D | bS011i30 National _ Semiconductor PN5179 2N5179 Q[]372Mfl fl | T-3/-2I MMBT5179 TL/G/10100-5 NPN RF Transistor Electrical Characteristics T a = 25°C unless otherwise noted Min P aram eter Sym b o l

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N5179

Contextual Info: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5179 TO-72 NPN SILICON PLANAR TRANSISTOR Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO Collector -Base Voltage

transistor 2N5179

Abstract: 2N5179
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO 20 Collector -Base Voltage VCEO 12 Collector -Emitter Voltage

2N5179

Abstract: D 431
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2N5179

Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2n5179 motorola

Abstract: MMBR5179
Contextual Info: 1EE D I I MOTOROLA SC XSTRS/R T - 3 i- n F MOTOROLA S E M IC O N D U C T O R h h h b TECHNICAL DATA The RF Line MMBR5179 Die Source S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed for small-signal amplification at frequencies to 500 MHz. Specif­

TCA 875

Abstract: 2n5179
Contextual Info: SGS-THOMSON RülDOæilLICTiOiDeS 2N 5179 VHF/UHF AMPLIFIER D E S C R IP T IO N The 2N5179 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoisetuned-amplifier and converter applications up to 500 MHz. IN T E R N A L S C H E M A T IC D IA G R A M

MMBR5179L

Abstract: 2n5179 gs noise
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR5179L The RF Line Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed fo r sm alt-sig n a l a m p lific a tio n at fre q u en cies to 500 MHz. S p e cif­ ically packaged fo r use in th ick and th in -film circuits using surface m o u n t

marking 25b sot23

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if­

D0312

Abstract: HA20 T3115
Contextual Info: 3QE D • o o a i s s 6 7 m s f Z 7 S G S -T H O M S O N “ 7# [f [L IO T s« S T T 2 N5179 S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up

schematic diagram dc converter 72 v to 12 v

Abstract: M 500 ma, 250 V 2N5179
Contextual Info: 3QE P • T'ìe'ìsa? Q O a i S S 6 7 S C S -T H O M S O N t^D g[H](s)iQ3i(Sir[R] [M10 i m — ■ ' 2N 5179 S G S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up

2N517

Abstract: 2N5179
Contextual Info: 3QE P • T'ìe'ìsa? Q O a i S S 6 7 S C S -T H O M S O N t^D g[H](s)iQ3i(Sir[R] [M10 i m — ■ ' 2N 5179 S G S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up

MOTOROLA 2N5179

Abstract: 2N5179 motorola 2n5179
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3 b 7 2 S 4 OGT HÜT b 4 • MOTb D MOTOROLA “T=3l-lS ■ SEMICONDUCTOR i TECHNICAL DATA 2N5179 The RF Line 4.5 dB @200 MHz HIGH FR E Q U E N C Y TR A N S IS TO R NPN SILIC O N NPN S ILIC O N R F HIGH F R E Q U E N C Y TR A N S IS TO R

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­